氧分压对铟镓锌氧薄膜晶体管性能影响

孙建明; 周婷婷; 任庆荣; 胡合合; 陈宁; 宁策; 王路; 刘文渠; 李东升

doi:doi:10.3788/yjyxs20163106.0558

液晶与显示, 2016, 31 (6): 558, 网络出版: 2016-11-14

氧分压对铟镓锌氧薄膜晶体管性能影响

Effect of oxygen partial pressure on the performance of indium gallium zinc oxide thin film transistor

论文大纲

孙建明 ^*周婷婷任庆荣胡合合陈宁宁策王路刘文渠李东升

作者单位

京东方科技集团股份有限公司, 北京１００１７６

铟镓锌氧薄膜晶体管氧分压阈值电压漂移电子积累层 indium gallium zinc oxide thin film transistor oxygen partial pressure shift of threshold voltage electron accumulation layer

摘要

采用标准的液晶显示屏基板制备工艺制备出铟镓锌氧薄膜晶体管（IGZO-TFT）,通过调节IGZO薄膜工艺中氧分压, 研究不同氧分压对TFT器件电学性能的影响。实验结果表明, 所有器件都展现出良好的电学特性, 随着氧分压从10%增加到50%, TFT的阈值电压由0.5 V增加到2.2 V, 而亚阈值摆幅没有发生变化。在栅极施加30 V偏压3 600 s后, 随着氧分压的增加, 阈值电压向正向的漂移量由1 V增加到9 V。经过分析得出高氧分压的IGZO-TFT器件中载流子浓度低, 建立相同导电能力的沟道时所需要栅极电压会更大, 阈值电压会增加。而在金属-绝缘层-半导体（MIS）结构中低载流子浓度会导致有源层能带弯曲的部分包含更多与电子陷阱相同的能态, 栅介质层(GI)会俘获更多的电子, 造成阈值电压漂移量较大的现象。

Abstract

Indium gallium zinc oxide thin film transistors (IGZO-TFT) were fabricated with the standard process of TFT-LCD arrays substrate.The effects of different oxygen partial pressure on IGZO-TFT performance were investigated by adjusting the oxygen partial pressure in IGZO film process. All devices showed good electrical properties.The threshold voltage of TFT was increased from 0.5 V to 2.2 V as the oxygen partial pressure was increased from 10% to 50%,whereas the sub-threshold swing had not changed. Applying a positive gate bias of 30 V for 3 600 s, with the increase of the oxygen partial pressure, the positive shift of threshold voltage of IGZO-TFT was increased from 1 V to 9 V. The carrier concentration in TFT with higher oxygen partial pressure is lower. So it requires higher gate voltage for building the channel with the same conductive capability, and therefore the threshold voltage will be higher. In the Metal-Insulator-Semiconductor (MIS) structure, the lower carrier concentration leads electron accumulation layer to be thicker. There will be more energy states in band bending part of active layer which are the same as electron traps of gate insulator (GI). Consequently, it is possible that more electrons are captured by GI, and shift of threshold voltage will be greater.

参考文献

[1] NOMURA K, HIROMICHI O, AKIHIRO T, et al. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors ［J］. Nature, 2004, 432(7016): 488-492.

[2] TSUBUKU M, WATANABE R, ISHIHARA N, et al. 16.1: Negative-Bias photo degradation mechanism in InGaZnO TFT ［J］. Sid Symposium Digest of Technical Papers, 2013, 44(1): 166-169.

[3] KAMIYA T, NOMURA K, HOSONO H. TOPICAL REVIEW: Present status of amorphous In-Ga-Zn-O thin-film transistors ［J］. Science and Technology of Advanced Materials, 2010, 11(4): 044305.

[4] KANG D H, LIM H, KIM C, et al. Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules ［J］. Applied Physics Letters, 2007, 90(19): 192101.

[5] PARK J S, JEONG J K, CHUNG H J, et al. Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water ［J］. Applied Physics Letters, 2008, 92(7): 072104.

[6] JEONG J K, YANG H W, JEONG J H, et al. Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors ［J］. Applied Physics Letters, 2008, 93(12): 123508.

[7] NOMURA K, KAMIYA T, OHTA H, et al. Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing ［J］. Applied Physics Letters, 2008, 93(19): 192107.

[8] 施敏, 伍国珏. 半导体器件物理［M］. 耿莉, 张瑞智, 译.西安: 西安交通大学出版社, 2008: 238-239.

SZE S M, NG K K. Physics of Semiconductor Devices ［M］. GENG L, ZHANG R Z, trans. Xi’an: Xi’an Jiaotong University Press, 2008: 238-239. (in Chinese)

[9] SURESH A, GOLLAKOTA P, WELLENIUS P, et al. Transparent, high mobility InGaZnO thin films deposited by PLD ［J］. Thin Solid Films, 2008, 516(7): 1326-1329.

[10] 刘恩科. 半导体物理学［M］. 北京: 电子工业出版社, 2011: 213-214.

LIU E K. The Physics of Semiconductors［M］.Beijing: Publishing House of Electronics Industry, 2011: 213-214.(in Chinese)

[11] SURESH A, MUTH J F. Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors ［J］. Applied Physics Letters, 2008, 92(3): 033502.

[12] QIAN H M, YU, LU H, et al. Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors ［J］. Chinese Physics B, 2015, 24(7): 077307.

孙建明, 周婷婷, 任庆荣, 胡合合, 陈宁, 宁策, 王路, 刘文渠, 李东升. 氧分压对铟镓锌氧薄膜晶体管性能影响[J]. 液晶与显示, 2016, 31(6): 558. SUN Jian-ming, ZHOU Ting-ting, REN Qing-rong, HU He-he, CHEN Ning, NING Ce, WANG Lu, LIU Weng-qu, LI Dong-seng. Effect of oxygen partial pressure on the performance of indium gallium zinc oxide thin film transistor[J]. Chinese Journal of Liquid Crystals and Displays, 2016, 31(6): 558.

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