红外与毫米波学报, 2013, 32 (2): 136, 网络出版: 2013-04-18   

MBE生长的PIN结构碲镉汞红外雪崩光电二极管

MBE growth HgCdTe avalanche photodiode based on PIN structure
作者单位
1 中国科学院上海技术物理研究所, 红外成像材料与器件重点实验室, 上海 200083
2 中国科学院研究生院, 北京 100049
摘要
对中波红外碲镉汞雪崩光电二极管(APD)特性进行理论计算, 获得材料的能量散射因子及电离阈值能级与材料特性的相互关系, 从而计算器件的理论雪崩增益与击穿电压 通过对材料特性(组分, 外延厚度, 掺杂浓度等)的优化, 设计并生长了适合制备PIN结构红外雪崩光电二极管的碲镉汞材料, 并进行了器件验证 结果显示, 在10 V反偏电压下, 该器件电流增益可达335.
Abstract
Hg1-xCdxTe (x=0.3) avalanche photodiodes (APDs) with a PIN structure was investigated theoretically. The energy dispersion factor and the threshold energy are acquired according to the parameters of material. The gain as well as the breakdown voltage of the device was obtained. The composition, thickness, doping level were optimized theoretically for the APD device. A high performance APD device with a gain of 335 at the bias voltage of-10V was fabricated, which consisted of a PIN structure mad of HgCdTe grown by MBE.
参考文献

[1] Verie C, Raymond F. Bandgap spin-orbit splitting resonance effects in Hg1-xCdxTe Alloys [J], Journal of Crystal Growth, 1982, 59: 342-346.

[2] Chen A, Sher A. CPA band calculation for HgCdTe [J], Journal of Vacuum Science & Technology, 1982, 21(1): 138-141.

[3] Lecoy G P, Orsal B, Alabedra R. Impact ionization resonance and auger recombination in Hg1-xCdx Te (0.6

[4] Reine M B, Marciniec J W, Wong K K, et al. Characterization of HgCdTe MWIR back-illuminated electron-initiated avalanche photodiodes [J]. Journal of Electronic Materials, 2008, 37(9): 1376-1386.

[5] Perrais G, Gravrand O, Baylet J, et al. Gain and dark current characteristics avalanche photo diodes [J], Journal of Electron Materials, 2007, 36: 963.

[6] Leveque G, Nassert M, Bertho D, et al. Ionization energies in CdHgTe avalanche photodiodes [J], Semiconductor Science Technology, 1993, 8: 1317-1323.

[7] Beck J, Wan C, Kinch M, et al. The HgCdTe electron avalanche photodiode [J], Journal of Electronic Materials, 2006, 35(6): 1166-1173.

[8] de Lyon T J, Baumgratz B, Chapman G, et al. MBE growth of HgCdTe avalanche photodiode structures for low-noise 1.55μm photodetection [J]. Journal of Crystal Growth, 1999, 201/202: 980-984.

[9] Kinch M A, Beck J D, Wan C F, et al. HgCdTe electron avalanche photodiodes [J], Journal of Electronic Materials 2004, 33(6): 630-639.

[10] Stratton R. The influence of interelectronic collisions on conduction and breakdown in polar crystals [J], Proceedings of the Royal Society A, 1958, 246: 406-422.

[11] Kinch M A. A theoretical model for the HgCdTe electron avalanche photodiode [J], Journal of Electronic Materials, 2008, 37(9): 1453-1459.

[12] labedra R, Orasl B, Lecoy G, et al. An HgCdTe avalanche photodiode for optical-fiber transmission systems at λ=1.3μm [J], IEEE Transactions on Electron Devices, 1985, 32(7): 1302-1306.

顾仁杰, 沈川, 王伟强, 付祥良, 郭余英, 陈路. MBE生长的PIN结构碲镉汞红外雪崩光电二极管[J]. 红外与毫米波学报, 2013, 32(2): 136. GU Ren-Jie, SHEN Chuan, WANG Wei-Qiang, FU Xiang-Liang, GUO Yu-Ying, CHEN Lu. MBE growth HgCdTe avalanche photodiode based on PIN structure[J]. Journal of Infrared and Millimeter Waves, 2013, 32(2): 136.

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