Ex situ characterization techniques in molecular beam epitaxy (MBE) have inherent limitations, such as being prone to sample contamination and unstable surfaces during sample transfer from the MBE chamber. In recent years, the need for improved accuracy and reliability in measurement has driven the increasing adoption of in situ characterization techniques. These techniques, such as reflection high-energy electron diffraction, scanning tunneling microscopy, and X-ray photoelectron spectroscopy, allow direct observation of film growth processes in real time without exposing the sample to air, hence offering insights into the growth mechanisms of epitaxial films with controlled properties. By combining multiple in situ characterization techniques with MBE, researchers can better understand film growth processes, realizing novel materials with customized properties and extensive applications. This review aims to overview the benefits and achievements of in situ characterization techniques in MBE and their applications for material science research. In addition, through further analysis of these techniques regarding their challenges and potential solutions, particularly highlighting the assistance of machine learning to correlate in situ characterization with other material information, we hope to provide a guideline for future efforts in the development of novel monitoring and control schemes for MBE growth processes with improved material properties.

利用金属有机化合物化学气相沉积（MOCVD）技术，在不同晶面的蓝宝石（Al₂O₃）衬底上实现了极性（0002）面、半极性（11-22）面和非极性（11-20）面InN薄膜的外延生长，并通过多种表征手段对三个不同极性面InN薄膜的结构和光学特性进行了系统研究。X射线衍射（XRD）曲线展示了（0002）、（11-22）和（11-20）面InN较强的衍射峰，表明InN薄膜具有较高的成膜质量。通过扫描电子显微镜（SEM）表面图发现，极性（0002）面InN的表面形貌较光滑，而半极性和非极性InN表面均存在未完全合并的孔洞。光致发光（PL）光谱展示，不同极性面InN的峰值能量在0.63 eV附近，并从极性、半极性到非极性逐渐红移。此外，可见-红外分光光度计测得的透射谱显示，极性（0002）面InN的吸收边约为0.85 eV，而半极性（11-22）面和非极性（11-20）面InN的吸收边约为0.78 eV，表明极性InN具有更大的斯托克斯位移。

Output power and reliability are the most important characteristic parameters of semiconductor lasers. However, catastrophic optical damage (COD), which usually occurs on the cavity surface, will seriously damage the further improvement of the output power and affect the reliability. To improve the anti-optical disaster ability of the cavity surface, a non-absorption window (NAW) is adopted for the 915 nm InGaAsP/GaAsP single-quantum well semiconductor laser using quantum well mixing (QWI) induced by impurity-free vacancy. Both the principle and the process of point defect diffusion are described in detail in this paper. We also studied the effects of annealing temperature, annealing time, and the thickness of SiO₂ film on the quantum well mixing in a semiconductor laser with a primary epitaxial structure, which is distinct from the previous structures. We found that when compared with the complete epitaxial structure, the blue shift of the semiconductor laser with the primary epitaxial structure is larger under the same conditions. To obtain the appropriate blue shift window, the primary epitaxial structure can use a lower annealing temperature and shorter annealing time. In addition, the process is less expensive. We also provide references for upcoming device fabrication.

应用200 mm硅基GaN外延片，研究晶圆级键合、薄膜转移和微小尺寸像素制备等技术，实现了Micro LED微显示阵列的点亮与显示功能。相对于传统蓝宝石基GaN外延晶圆，200 mm硅基GaN外延晶圆与硅基驱动晶圆尺寸更匹配，有利于通过晶圆键合工艺实现低成本量产。同时对工艺量产的难点和解决思路进行了分析，指出显示缺陷是目前亟待解决的问题。

PN结分别制备在HgCdTe外延薄膜材料的Cd组分非线性分布区和线性分布区的高组分端，研究了具有组分梯度的HgCdTe探测器的光电特性。计算不同温度下组分梯度产生的内建电场，结果显示Cd组分线性分布产生的内建电场在100～200 V/cm，而Cd组分非线性分布使得样品表面薄层的内建电场高达2 000 V/cm，推测组分梯度产生的内建电场对光生少子运动的影响是引起两个样品光电性能差异的主要原因。通过分析样品响应率随温度的三种不同变化趋势，提出利用温度调控组分梯度产生的内建电场，有利于降低空间电荷效应，为大注入下提高HgCdTe探测器的饱和阈值提供了一种新的设计思路。

采用DZ125高温合金粉末对DD5合金进行激光沉积修复，通过正交试验的方法，研究了激光功率、扫描速度和送粉量对单道单层沉积区枝晶外延生长的影响，实现了沉积区枝晶外延生长的控制。在此基础上，进行单道多层沉积修复试验，分析测量了单道多层沉积区的显微组织和硬度。结果表明：较低的热输入量和送粉量可显著提高沉积区枝晶外延占比；当激光功率为420 W、扫描速度为6 mm/s、送粉量为1.5 g/min时，单道单层沉积区枝晶外延占比约为100%。单道多层沉积区中下部为平面晶、沿沉积方向外延生长的柱状晶，顶部为等轴晶；沉积区γ′相不均匀地分布在γ相中，枝晶间区域的γ′相尺寸大于枝晶干区域的γ′相尺寸；沉积区底部短棒状MC碳化物沿枝晶间分布，且Ta元素含量较高；沉积区顶部的小块状以及八面体状MC碳化物随机分布。DD5合金基体平均显微硬度为425 HV_0.5，沉积区平均显微硬度略高于基体，为449 HV_0.5；与沉积区中部相比，沉积区底部和顶部的显微硬度略高，沉积区底部显微硬度最高。