Output power and reliability are the most important characteristic parameters of semiconductor lasers. However, catastrophic optical damage (COD), which usually occurs on the cavity surface, will seriously damage the further improvement of the output power and affect the reliability. To improve the anti-optical disaster ability of the cavity surface, a non-absorption window (NAW) is adopted for the 915 nm InGaAsP/GaAsP single-quantum well semiconductor laser using quantum well mixing (QWI) induced by impurity-free vacancy. Both the principle and the process of point defect diffusion are described in detail in this paper. We also studied the effects of annealing temperature, annealing time, and the thickness of SiO₂ film on the quantum well mixing in a semiconductor laser with a primary epitaxial structure, which is distinct from the previous structures. We found that when compared with the complete epitaxial structure, the blue shift of the semiconductor laser with the primary epitaxial structure is larger under the same conditions. To obtain the appropriate blue shift window, the primary epitaxial structure can use a lower annealing temperature and shorter annealing time. In addition, the process is less expensive. We also provide references for upcoming device fabrication.

设计并制备了一款780 nm半导体激光器，并进行了外腔反馈锁模研究。利用金属有机化学气相沉积技术制备了激光器外延层，采用GaAsP/GaInP作为量子阱/波导层有源区，限制层采用低折射率AlGaInP材料。采用超高真空解理钝化技术，在激光器腔面蒸镀无定形ZnSe钝化层。未钝化器件在输出功率2.5 W时发生腔面灾变损伤（COD），钝化后器件未发生COD现象，电流在10 A时输出功率10.1 W，电光转换效率54%。体布拉格光栅（VBG）外腔锁定前后，器件的光谱半峰全宽分别为2.6 nm和0.06 nm，VBG变温调控波长范围约230 pm。