Flexoelectric effect describes the electromechanical coupling between the strain gradient and its internal polarization in all dielectrics. Despite this universality, the resulting flexoelectric field remains small at the macroscopic level. However, in nanosystems, the size-dependent effect of flexoelectricity becomes increasingly significant, leading to a notable flexoelectric field that can strongly influence the material’s physical properties. This review aims to explore the flexoelectric effect specifically at the nanoscale. We achieve this by examining strain gradients generated through two distinct methods: internal inhomogeneous strain and external stimulation. In addition, advanced synthesis techniques are utilized to enhance the properties and functionalities associated with flexoelectricity. Furthermore, we delve into other coupled phenomena observed in thin films, including the coupling and utilization of flexomagnetic and flexophotovoltaic effects. This review presents the latest advancements in these areas and highlights their role in driving further breakthroughs in the field of flexoelectricity.

基于纳米薄膜铌酸锂与氮化硅复合波导结构, 构建了光电子可逆逻辑门, 应用于神经形态光子学和量子计算。该光电子可逆逻辑门的主体由两个马赫-曾德尔调制器级联而成, 结构紧凑, 全长仅为4.4mm, 是普通质子交换铌酸锂调制器长度的百分之一。工作在1.55μm 波长时, 该马赫-曾德尔调制器仅需4.9V电压就可以实现一次完整的功率交换, 很好地与CMOS工艺相兼容。器件特性研究表明, 该光电子可逆逻辑门能够实现可逆逻辑运算功能。此外, 该器件在1.4~1.6μm波长范围内, 插入损耗均值为0.6dB, 输出端口的最小串扰为-47dB, 消光比的最大值为41dB; 在4~6V电压范围内, 插入损耗均值为0.63dB, 输出端口的最小串扰为-26dB, 消光比的最大值为22dB, 显示出了良好的响应特性。

基于共焦拉曼荧光光谱仪开发了一种新型的吸收光谱测试技术,并测试了金纳米复合薄膜的吸收光谱。相对传统的测试系统,该方法操作方便快捷,样品制备简单易行,且具备精确聚焦、显微成像和微区选择功能,适用于纳米薄膜结构样品的吸收光谱测试。

考虑到nip型[ITO/a-Si(n)/a-Si(i)/a-Si(p)/Al]非晶硅光伏电池的各膜层厚度、掺杂浓度等因素，对非晶硅光伏电池的转换效率、填充因子、开路电压等性能参数进行了数值分析与讨论。结果表明,随p型层厚度的增加，光伏电池的短路电流密度、转换效率、开路电压值都有所增加。当本征层的厚度增加时，短波段内的光谱响应变差、内量子效率下降。当n型层厚度为5 nm，本征层厚度为5 nm，p型层厚度为10 μm，受主掺杂浓度为2.5×1019 cm-3，施主掺杂浓度为1.5×1016 cm-3时，转换效率可达9.728%。

采用溶胶-凝胶(sol-gel)工艺制备了Sb∶SnO2/SiO2复合膜。通过原子力显微镜(AFM)观察了薄膜样品的表面形貌,利用紫外-可见光谱,p-偏振光反射比角谱研究了复合薄膜的光学特性。结果表明,薄膜中的晶粒具有纳米尺寸(～35 nm)的大小,比表面积大,孔隙率高;薄膜的透光率高,可见光波段近95%;其光学禁带宽度约3.67 eV。因此Sb∶SnO2/SiO2纳米复合膜可作为气敏薄膜的理想选择。通过对三种不同的气体C3H8,C2H5OH及NH3气敏特性的测试表明,Sb掺杂大大提高了SnO2薄膜对C2H5OH的灵敏度,纳米Sb∶SnO2/SiO2复合膜的气敏灵敏度高于纯SnO2薄膜及Sb掺杂的SnO2薄膜。