The rapid spread of viral zoonoses can cause severe consequences, including huge economic loss, public health problems or even global crisis of society. Clinical detection technology plays a very important role in the prevention and control of such zoonoses. The rapid and accurate detection of the pathogens of the diseases can directly lead to the early report and early successful control of the diseases. With the advantages of being easy to use, fast, portable, multiplexing and cost-effective, semiconductor biosensors are kinds of detection devices that play an important role in preventing epidemics, and thus have become one of the research hotspots. Here, we summarized the advances of semiconductor biosensors in viral zoonoses detection. By discussing the major principles and applications of each method for different pathogens, this review proposed the directions of designing semiconductor biosensors for clinical application and put forward perspectives in diagnostic of viral zoonoses.The rapid spread of viral zoonoses can cause severe consequences, including huge economic loss, public health problems or even global crisis of society. Clinical detection technology plays a very important role in the prevention and control of such zoonoses. The rapid and accurate detection of the pathogens of the diseases can directly lead to the early report and early successful control of the diseases. With the advantages of being easy to use, fast, portable, multiplexing and cost-effective, semiconductor biosensors are kinds of detection devices that play an important role in preventing epidemics, and thus have become one of the research hotspots. Here, we summarized the advances of semiconductor biosensors in viral zoonoses detection. By discussing the major principles and applications of each method for different pathogens, this review proposed the directions of designing semiconductor biosensors for clinical application and put forward perspectives in diagnostic of viral zoonoses.

量子限制效应使硅纳米线具有良好的场致发射特性, 结合多孔硅的准弹道电子漂移模型可提高场发射器件的性能。传统的金属辅助化学刻蚀法制备硅纳米线的效率较低, 本研究在传统方法的基础上引入恒流源, 提出电催化金属辅助化学刻蚀法, 高效制备了硅纳米线/多孔硅复合结构。在外加30 mA恒定电流的条件下, 硅纳米线的平均制备速率可达308 nm/min, 较传统方法提升了173%。研究了AgNO₃浓度、刻蚀时间和刻蚀电流对复合结构形貌的影响规律; 测试了采用电催化金属辅助化学刻蚀法制备样品的场发射特性。结果显示样品的阈值场强为10.83 V/μm, 当场强为14.16 V/μm时, 电流密度为64 μA/cm²。

硅纳米线的消光截面在特定波段可以达到其几何截面的数百倍, 这意味着其可以将数百倍于其几何截面范围内的光收集起来。 因此, 硅纳米线被广泛应用于太阳电池、 传感器和光催化等光电子领域。 硅纳米线主要有圆柱形(C-SiNW)和锥形(T-SiNW)两种形貌。 其中, T-SiNW在更宽的波段范围具有大的消光系数, 因而具有更好的广谱光收集能力。 然而, 当光从顶端入射时T-SiNW的吸收系数的数值却很小, 严重限制了其实际应用。 因此亟需研究入射角度对T-SiNW光谱行为的影响。 此外, 光的偏振也将影响T-SiNW的光谱行为。 基于离散偶极近似方法, 详细研究了入射角度和偏振对T-SiNW的消光谱、 吸收光谱和散射性质的影响。 建立了长度1 μm、 上底直径20 nm、 下底直径120 nm的T-SiNW模型; 入射角度在0~180°范围内以30°间隔递增; 偏振包括平行于入射面和垂直于入射面两种情况。 首先, 研究了入射角度和偏振影响T-SiNW的消光、 吸收谱和吸收/消光比的规律; 并借助近场分析探讨了T-SiNW光谱行为的机制。 然后, 分析了入射角度和偏振对T-SiNW散射光角度分布的影响。 结果表明, 倒置T-SiNW的消光谱与正置情况完全相同, 但其吸收谱数值却大的多: 在0.3~0.55 μm波段范围内的平均吸收/消光比超过70%。 水平放置的T-SiNW消光谱数值最大、 吸收谱数值最小, 因此具有最强的光收集能力和最小的光吸收占比; 同时, 还可以将垂直入射光在近似水平的方向上散射出去。 与对垂直偏振光相比, T-SiNW对平行偏振光的吸收系数更大, 但吸收/消光占比更小。