Author Affiliations
Abstract
1 State Key Laboratory for Modern Optical Instrumentation, Center for Optical & Electromagnetic Research, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang Universityhttps://ror.org/00a2xv884, Zijingang Campus, Hangzhou 310058, China
2 School of Precision Instrument and Optoelectronic Engineering, Tianjin University, Tianjin 300072, China
3 Key Laboratory of Optoelectronic Information Science and Technology, Ministry of Education, Tianjin 300072, China
4 Ningbo Research Institute, Zhejiang University, Ningbo 315100, China
On-chip polarization controllers are extremely important for various optical systems. In this paper, a compact and robust silicon-based on-chip polarization controller is proposed and demonstrated by integrating a special polarization converter and phase shifters. The special polarization converter consists of a 1×1 Mach–Zehnder interferometer with two polarization-dependent mode converters at the input/output ends. When light with an arbitrary state of polarization (SOP) is launched into the chip, the TE0 and TM0 modes are simultaneously excited. The polarization extinction ratio (PER) and the phase difference for the TE0/TM0 modes are tuned by controlling the first phase shifter, the polarization converter, and the second phase shifter. As a result, one can reconstruct the light SOP at the output port. The fabricated polarization controller, as compact as 150 μm×700 μm, exhibits an excess loss of less than 1 dB and a record PER range of >54 dB for arbitrary input light beams in the wavelength range of 1530–1620 nm.
Photonics Research
2024, 12(2): 183
Author Affiliations
Abstract
1 University Paris-Saclayhttps://ror.org/00zay3w86, CNRS, Centre for Nanoscience and Nanotechnology (C2N), Palaiseau 91120, France
2 University Grenoble Alpes, CEA, LETI, Grenoble 38000, France
3 Optoelectronics Research Centre, Zepler Institute for Photonics and Nanoelectronics, Faculty of Engineering and Physical Sciences, University of Southampton, Southampton SO17 1BJ, UK
4 e-mail: jonathan.peltier@c2n.upsaclay.fr
5 e-mail: Weiwei.Zhang@soton.ac.uk
Silicon-based electro-optic modulators contribute to easing the integration of high-speed and low-power consumption circuits for classical optical communications and data computations. Beyond the plasma dispersion modulation, an alternative solution in silicon is to exploit the DC Kerr effect, which generates an equivalent linear electro-optical effect enabled by applying a large DC electric field. Although some theoretical and experimental studies have shown its existence in silicon, limited contributions relative to plasma dispersion have been achieved in high-speed modulation so far. This paper presents high-speed optical modulation based on the DC Kerr effect in silicon PIN waveguides. The contributions of both plasma dispersion and Kerr effects have been analyzed in different waveguide configurations, and we demonstrated that the Kerr induced modulation is dominant when a high external DC electric field is applied in PIN waveguides. High-speed optical modulation response is analyzed, and eye diagrams up to 80 Gbit/s in NRZ format are obtained under a d.c. voltage of 30 V. This work paves the way to exploit the Kerr effect to generate high-speed Pockels-like optical modulation.
Photonics Research
2024, 12(1): 51
Yang Shi 1†Xiang Li 2†Mingjie Zou 1Yu Yu 1,3,5,*Xinliang Zhang 1,3,4,6,*
Author Affiliations
Abstract
1 Wuhan National Laboratory for Optoelectronics & School of Optical and Electronic Information, Huazhong University of Science and Technologyhttps://ror.org/00p991c53, Wuhan 430074, China
2 School of Mechanical Engineering and Electronic Information, China University of Geosciences, Wuhan 430074, China
3 Optics Valley Laboratory, Wuhan 430074, China
4 Xidian University, Xi’an 710126, China
5 e-mail: yuyu@mail.hust.edu.cn
6 e-mail: xlzhang@mail.hust.edu.cn
High-performance germanium photodiodes are crucial components in silicon photonic integrated circuits for large-capacity data communication. However, the bandwidths of most germanium photodiodes are limited by the intractable resistance–capacitance parasitic effect. Here, we introduce a unique U-shaped electrode to alleviate this issue, reducing the parasitic effect by 36% without compromising any other performance. Experimentally, a large bandwidth of 103 GHz, an optical responsivity of 0.95 A/W at 1550 nm, and a dark current as low as 1.3 nA are achieved, leading to a record high specific detectivity. This is the first breakthrough to 100 GHz bandwidth among all vertical germanium photodiodes, to the best of our knowledge. Open eye diagrams of 120 Gb/s on-off keying and 200 Gb/s four-level pulse amplitude signals are well received. This work provides a promising solution for chip-based ultra-fast photodetection.
Photonics Research
2024, 12(1): 1
Author Affiliations
Abstract
1 Electronics and Telecommunications Research Institute (ETRI), Daejeon 34129, Republic of Korea
2 Department of Physics, University of Trentohttps://ror.org/05trd4x28, 38123 Trento, Italy
3 Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
In the same silicon photonic integrated circuit, we compare two types of integrated degenerate photon-pair sources (microring resonators and waveguides) using Hong–Ou–Mandel (HOM) interference experiments. Two nominally identical microring resonators are coupled to two nominally identical waveguides, which form the arms of a Mach–Zehnder interferometer. This is pumped by two lasers at two different wavelengths to generate, by spontaneous four-wave mixing, degenerate photon pairs. In particular, the microring resonators can be thermally tuned in or out of resonance with the pump wavelengths, thus choosing either the microring resonators or the waveguides as photon-pair sources, respectively. In this way, an on-chip HOM visibility of 94% with microring resonators and 99% with straight waveguides is measured upon filtering. We compare our experimental results with theoretical simulations of the joint spectral intensity and the purity of the degenerate photon pairs. We verify that the visibility is connected to the sources’ indistinguishability, which can be quantified by the overlap between the joint spectral amplitudes (JSA) of the photon pairs generated by the two sources. We estimate a JSA overlap of 98% with waveguides and 89% with microring resonators.
Photonics Research
2023, 11(11): 1820
Author Affiliations
Abstract
1 Centre for Photonic Systems, Electrical Engineering Division, Department of Engineering, University of Cambridgehttps://ror.org/013meh722, Cambridge CB3 0FA, UK
2 Huawei Technologies Duesseldolf GmbH, European Research Center, 80992 Munich, Gemany
3 Current address: Peng Cheng Laboratory, Shenzhen 518000, China
This paper presents a novel approach to counterbalance free-carrier-absorption (FCA) in electro-optic (E-O) Mach–Zehnder interferometer (MZI) cells by harnessing the self-heating effect. We show insights on crosstalk limitations in MZIs with direct carrier-injection and provide a detailed design methodology on a differential phase shifter pair. Leveraging both free-carrier dispersion (FCD) and self-heating effects, our design enables arbitrary phase tuning with balanced FCA loss in the pair of arms, eliminating the need for additional phase corrections and creating ultralow crosstalk MZI elements. This neat design disengages from the commonly used nested structure, thus providing an opportunity of embedding tunable couplers for correcting imperfect splitting ratios given that only two are needed. We show that with the use of tunable directional couplers, a standard ±10 nm process variation is tolerated, while achieving a crosstalk ratio below -40 dB. By direct carrier injection in both arms, the proposed device operates at nanosecond scales and can bring about a breakthrough in the scalability of E-O switch fabrics, as well as other silicon integrated circuits that have stringent requirements for crosstalk leakage.
Photonics Research
2023, 11(10): 1757
Author Affiliations
Abstract
1 Institute of Quantum Technologies (IQT), The Hong Kong Polytechnic University, Hong Kong, China
2 Quantum Science and Engineering Centre (QSec), Nanyang Technological Universityhttps://ror.org/02e7b5302, Singapore, Singapore
3 Departament de Fisica Quantica i Astrofisica and Institut de Ciencies del Cosmos (ICCUB), Universitat de Barcelona, Barcelona, Spain
4 Quantum Research Centre, Technology Innovation Institute, Abu Dhabi, UAE
5 Centre for Quantum Technologies, National University of Singapore, Singapore, Singapore
6 Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore, Singapore
7 Advanced Micro Foundry, Singapore, Singapore
8 National Institute of Education, Nanyang Technological University, Singapore, Singapore
In the modern financial industry system, the structure of products has become more and more complex, and the bottleneck constraint of classical computing power has already restricted the development of the financial industry. Here, we present a photonic chip that implements the unary approach to European option pricing, in combination with the quantum amplitude estimation algorithm, to achieve quadratic speedup compared to classical Monte Carlo methods. The circuit consists of three modules: one loading the distribution of asset prices, one computing the expected payoff, and a third performing the quantum amplitude estimation algorithm to introduce speedups. In the distribution module, a generative adversarial network is embedded for efficient learning and loading of asset distributions, which precisely captures market trends. This work is a step forward in the development of specialized photonic processors for applications in finance, with the potential to improve the efficiency and quality of financial services.
Photonics Research
2023, 11(10): 1703
Author Affiliations
Abstract
School of Optoelectronic Engineering and Instrumentation Science, Dalian University of Technology, Dalian 116024, China
In-band full-duplex (IBFD) technology can double the spectrum utilization efficiency for wireless communications, and increase the data transmission rate of B5G and 6G networks and satellite communications. RF self-interference is the major challenge for the application of IBFD technology, which must be resolved. Compared with the conventional electronic method, the photonic self-interference cancellation (PSIC) technique has the advantages of wide bandwidth, high amplitude and time delay tuning precision, and immunity to electromagnetic interference. Integrating the PSIC system on chip can effectively reduce the size, weight, and power consumption and meet the application requirement, especially for mobile terminals and small satellite payloads. In this paper, the silicon integrated PSIC chip is presented first and demonstrated for IBFD communication. The integrated PSIC chip comprises function units including phase modulation, time delay and amplitude tuning, sideband filtering, and photodetection, which complete the matching conditions for RF self-interference cancellation. Over the wide frequency range of C, X, Ku, and K bands, from 5 GHz to 25 GHz, a cancellation depth of more than 20 dB is achieved with the narrowest bandwidth of 140 MHz. A maximum bandwidth of 630 MHz is obtained at a center frequency of 10 GHz. The full-duplex communication experiment at Ku-band by using the PSIC chip is carried out. Cancellation depths of 24.9 dB and 26.6 dB are measured for a bandwidth of 100 MHz at central frequencies of 12.4 GHz and 14.2 GHz, respectively, and the signal of interest (SOI) with 16-quadrature amplitude modulation is recovered successfully. The factors affecting the cancellation depth and maximum interference to the SOI ratio are investigated in detail. The performances of the integrated PSIC system including link gain, noise figure, receiving sensitivity, and spurious free dynamic range are characterized.
Photonics Research
2023, 11(10): 1635
Author Affiliations
Abstract
1 School of Electrical and Electronic Engineering, Nanyang Technological Universityhttps://ror.org/02e7b5302, Singapore 639798, Singapore
2 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
3 Applied Materials, Inc., Sunnyvale, California 95054, USA
4 Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore
5 e-mail: shaoteng.wu@ntu.edu.sg
6 e-mail: rongqiao.wan@ntu.edu.sg
7 e-mail: chenqm@ntu.edu.sg
The development of an efficient group-IV light source that is compatible with the CMOS process remains a significant goal in Si-based photonics. Recently, the GeSn alloy has been identified as a promising candidate for realizing Si-based light sources. However, previous research suffered from a small wafer size, limiting the throughput and yield. To overcome this challenge, we report the successful growth of GeSn/Ge multiple-quantum-well (MQW) p-i-n LEDs on a 12-inch (300-mm) Si substrate. To the best of our knowledge, this represents the first report of semiconductor LEDs grown on such a large substrate. The MQW LED epitaxial layer is deposited on a 12-inch (300-mm) (001)-oriented intrinsic Si substrate using commercial reduced pressure chemical vapor deposition. To mitigate the detrimental effects of threading dislocation densities on luminescence, the GeSn/Ge is grown pseudomorphically. Owing to the high crystal quality and more directness in the bandgap, enhanced electroluminescence (EL) integrated intensity of 27.58 times is demonstrated compared to the Ge LED. The MQW LEDs exhibit EL emission near 2 μm over a wide operating temperature range of 300 to 450 K, indicating high-temperature stability. This work shows that GeSn/Ge MQW emitters are potential group-IV light sources for large-scale manufacturing.
Photonics Research
2023, 11(10): 1606
Author Affiliations
Abstract
1 National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
2 University of Chinese Academy of Sciences, Beijing 100049, China
3 Shanghai Industrial μTechnology Research Institute, Shanghai 201800, China
We demonstrate a GeSi electro-absorption modulator with on-chip thermal tuning for the first time, to the best of our knowledge. Theoretical simulation proves that the device temperature can be tuned and the effective operating wavelength range can be broadened. When the heater power is 4.63 mW, the temperature of the waveguide increases by about 27 K and the theoretical operating wavelength range is broadened by 23.7 nm. The experimental results show that the optical transmission line shifted to the longer wavelength by 4.8 nm by every 1 mW heater power. The effective static operating wavelength range of the device is increased from 34.4 nm to 60.1 nm, which means it is broadened by 25.7 nm. The band edge shift coefficient of 0.76 nm/K is obtained by temperature simulation and linear fitting of the measured data. The device has a 3 dB EO bandwidth of 89 GHz at 3 V reverse bias, and the eye diagram measurement shows a data rate of 80 Gbit/s for non-return-to-zero on–off keying modulation and 100 Gbit/s for 4 pulse amplitude modulation in the 1526.8 nm to 1613.2 nm wavelength range as the heater power increases from 0 mW to 10.1 mW.
Photonics Research
2023, 11(8): 1474
Author Affiliations
Abstract
School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)https://ror.org/05apxxy63, Daejeon, Republic of Korea
Efficient extraction of light from a high refractive index silicon waveguide out of a chip is difficult to achieve. An inverse design approach was employed using the particle swarm optimization method to attain a vertical emitting meta-grating coupler with high coupling efficiency in a 220-nm-thick silicon-on-insulator platform. By carefully selecting the figure of merit and appropriately defining parameter space, unique L-shape and U-shape grating elements that boosted the out-of-plane radiation of light were obtained. In addition, a 65.7% (-1.82 dB) outcoupling efficiency and a 60.2% (-2.2 dB) fiber-to-chip vertical coupling efficiency with an 88 nm 3 dB bandwidth were demonstrated by numerical simulation. Considering fabrication constraints, the optimized complex meta-grating coupler was modified to correspond to two etching steps and was then fabricated with a complementary metal-oxide-semiconductor-compatible process. The modified meta-grating coupler exhibited a simulated coupling efficiency of 57.5% (-2.4 dB) with a 74 nm 3-dB bandwidth in the C-band and an experimentally measured coupling efficiency of 38% (-4.2 dB).
Photonics Research
2023, 11(6): 897

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