本文报道了一种基于黑硅微结构的全硅PIN光电探测器。该器件结合了黑硅结构宽光谱高吸收的特性，以及PIN光电探测器高量子效率高响应速度的特点，通过在传统硅PIN光电探测器结构的基础上增加黑硅微结构层，在不影响响应速度的条件下，提高了探测器在近红外波段响应特性。并且针对纵向结构垂直入射PIN光电探测器时量子效率与响应速度相矛盾的问题，提出了解决方案。测试结果表明，该器件的量子效率可达80%，峰值波长为940 nm，光响应度达到0.55 A/W，暗电流降至700 pA，响应时间为200 ns。

An all-silicon PIN photodetector based on black silicon microstructure is reported. The device combines the characteristics of broad spectrum and high absorption of black silicon structure and the characteristics of high quantum efficiency and high response speed of PIN photodetectors. By adding a black silicon microstructure layer based on the traditional silicon PIN photodetector structure, the response characteristics of the detector in the near-infrared band are improved without affecting the response speed. A method is proposed to solve the contradiction between quantum efficiency and response speed in the vertical structure of the PIN photodetector. The test results show that the quantum efficiency of the device can reach 80%, and the peak wavelength is 940 nm. The light responsivity reaches 0.55 A/W, and the dark current is about 700 pA. The response time is 200 ns.