硅异质结太阳能电池的制作过程中，所有工艺步骤都会影响其性能。通过扫描电镜、反射率、量子效率及少子寿命测试，逐步优化硅异质结太阳能电池的性能。结果表明，单晶硅片钝化的最佳锥体尺寸约为6~9 μm。利用高质量的本征氢化非晶硅（a-Si：H）薄膜钝化硅片，获得了超过5 ms的少数载流子寿命。采用大带隙p型a-SiC_x：H薄膜替代p型a-Si：H薄膜作为发射层，提高电池在较短波长范围内的光响应。通过降低铟锡氧化物的自由载流子吸收，显著改善了长波长区域光响应。综合优化后硅异质结太阳能电池功率转换效率达到21.68%。

All process steps in the fabrication process affect the performance of silicon heterojunction solar cells. In this contribution, we optimize the performance of SHJ solar cells by step-by-step analysis including scanning electron microscope, reflectivity, quantum efficiency and minority carrier lifetime measurement. It is indicated that the optimum pyramid size for c-Si wafer passivation is about 6~9 μm. More than 5 ms of minority carrier lifetime was obtained by passivating silicon wafer with high quality intrinsic hydrogenated amorphous silicon (a-Si:H) film. Large band gap p-type a-SiCx:H was used as emitter layer alternative to p-type a-Si:H film, which will increase the photoresponse in the short wavelength range. A significant improvement of photoresponse in the long wavelength range was also improved by reducing the free carrier absorption of indium tin oxides. Based on this optimization silicon heterojunction solar cells with power conversion efficiencies exceeding 21.68% were prepared on c-Si wafers textured in alkaline solution.