红外与毫米波学报, 2001, 20 (1): 53, 网络出版: 2006-05-10   

生长在(311)A面GaAs衬底上的InAlAs/AlGaAsⅡ型量子点的光致发光研究

PHOTOLUMINESCENCE STUDIES OF TYPE-Ⅱ SELF-ASSEMBLED InAl As/AlGaAs QDs GROWN ON (311)A GaAs SUBSTRATE
作者单位
1 中国科学院半导体研究所
2 超晶格和微结构国家重点实验室,北京,100083
3 半导体材料科学实验室,北京,100083
摘要
测量了生长在(311)A面GaAs衬底上的In0.55Al0.45As/Al0.5Ga0.5As自组织量子点光致发光谱,变激发功率和压力实验证明发光峰是与X能谷相关的Ⅱ型发光峰,将它指认为从Al0.5Ga0.5As势垒X能谷到In0.55Al0.45As重空穴的Ⅱ型跃迁.高温下观察到的高能峰随压力增大向高能方向移动,认为它来源于量子点中Γ能谷与价带之间的跃迁.在压力下还观察到了一个新的与X相关的发光峰,认为它与双轴应变引起的导带X能谷劈裂有关.
Abstract
The photoluminescence (PL) spectra of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots (QD) grown on (311)A GaAs substrate were measured. The type-Ⅱ character of PL related to the X valley was verified by excitation power dependence of peak position and the PL spectra under different pressure, which was attributed to the type-Ⅱ transition from X valley in Al0.5Ga0.5As to heavy holes in In0. 55Al0.45As.The high energy Γ-related transition was also observed above 70K and aasigned as the transition between Γ valley and heavy holes in In 0.55Al0.45As.The X-valley split was discussed to interpret the observed second X-related peak under pressure.
参考文献

[1] Glaser E R, Bennett B R, Shanabrook B V,et al. Photoluminescence studies of self-assembled InSb, GaSb and A1Sb quantum dot heterostructure,A ppl. Phys. Lett.,1996,68: 3614

[2] Bennett B R, Magno R, Shanabrook B V. Photoluminescence studies of self-assembled InSb, GaSb, and A1Sb quantum dot heterostructures,Appl.Phys.Lett.,1996,68: 505

[3] Fafard S, Leon R, Leon D,et al. Visible photoluminescence from N-dot ensembles and linewidth of ultrasmall AlInAs/AlGaAs quantum dot, Phys. Rev.B,1994,50: 8086

[4] Phillips J, Bhattacharya P, Venkateswaran. Pressure-induced energy level crossings and narrouing of photoluminescence linewidth in self-assembled InAsAs/AlGaAs quantum dots, Appl. Phys. Lett.,1999,74: 1549

[5] Fafard S, Leon R, Leonard D,et al. Phonons and radiative recombination in self-assembled quantum dots,Phys. Rev.B,1995,52 : 5752

[6] Fu L P, Bacalzo F T, Gilliland G D, et al. Photoluminescence determination of thermally activated fast X-Γ interlayer electron scattering in t ype-Ⅱ GaAs/AlAs superlattice, Phys. Rev.B,1995,51: 17630

[7] Venkateswaran U, Chandrasekhar M, Chandrasekhar H R, et al. High-pressure studies of GaAs-AlGaAs quantum wells of widths 26 to 150 , Phys. Rev. B,1986,33: 8416

[8] Li G H, Goni A R, Abraham C, et al. Photoluminescence from stra ined InAs monolayers in GaAs under pressure, Phys.Rev.B,1994,50 : 1575

[9] Ikonic Z.Srivastava G P. Electronic structure of [133]-grown (Ga As)m (AlAs)n superlattices,Phys.Rev.B,1994,49(15):10749

[10] Chris G. Walle Van de Band lineups and deformation potentials in the model-sold theory,Phys. Rev.B,1989,38: 10749

陈晔, 李国华, 朱作明, 韩和相, 汪兆平, 周伟, 王占国. 生长在(311)A面GaAs衬底上的InAlAs/AlGaAsⅡ型量子点的光致发光研究[J]. 红外与毫米波学报, 2001, 20(1): 53. 陈晔, 李国华, 朱作明, 韩和相, 汪兆平, 周伟, 王占国. PHOTOLUMINESCENCE STUDIES OF TYPE-Ⅱ SELF-ASSEMBLED InAl As/AlGaAs QDs GROWN ON (311)A GaAs SUBSTRATE[J]. Journal of Infrared and Millimeter Waves, 2001, 20(1): 53.

本文已被 1 篇论文引用
被引统计数据来源于中国光学期刊网
引用该论文: TXT   |   EndNote

相关论文

加载中...

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!