针对p型GaN IMPATT制造工艺仍未成熟，提出了一种In04Ga06N/GaN n-n型异质结构来取代常规p-n结构，使GaN IMPATT二极管工作在IMPATT模式下。研究了这种n-n型In04Ga06N/GaN碰撞电离雪崩渡越时间(IMPATT)二极管的噪声特性，与同等条件下的传统GaN基p-n结IMPATT二极管作比较。结果表明，在不同偏置电流密度和不同InGaN层厚度下，该器件的噪声特性均好于传统p-n结构。结合器件交流输出特性可以得知，In04Ga06N/GaN同型异质结IMPATT器件不仅在功率效率上优于GaN p-n结构，其噪声性能表现亦优于传统GaN p-n结构，特别是在高频段的噪声特性优势更加明显。该研究可以为GaN基IMPATT器件的设计提供更多的思路和参考。

Due to the immature of the p-type GaN IMPATT manufacturing process, an In04Ga06N/GaN n-ntype heterostructure was proposed to replace the conventional p-n structure, and made the GaN IMPATT diode work in IMPATT mode. The noise characteristics of the n-n type In04Ga06N/GaN IMPATT diode were studied and compared with the conventional GaN based p-n junction IMPATT diode under the same conditions. The results showed that the noise characteristics of the device with different bias current density and different thickness of InGaN layer were better than those of conventional p-n structure. Combined with the RF output characteristics of the device, it could be found that the In04Ga06N/GaN homo-heterojunction IMPATT device was not only superior to the GaN p-n structure in power and efficiency, but also superior to the conventional GaN p-n structure in noise performance, especially in the high frequency band. This work could provide more ideas and references for the design of GaN based IMPATT devices.