压电与声光, 2022, 44 (4): 513, 网络出版: 2022-10-29   

Sn-Ge改性BCZT无铅压电陶瓷的结构与性能

Structures and Properties of Sn-Ge-Modified BCZT Lead-Free Piezoelectric Ceramics
作者单位
1 中国振华集团新云电子元器件有限责任公司,贵州 贵阳 550025
2 贵州振华红云电子有限公司, 贵州 贵阳 550025
3 贵州大学 材料与冶金学院, 贵州 贵阳 550025
摘要
采用传统的固相反应法将Sn、Ge以不同质量比掺入(Ba0.85Ca0.15)(Zr0.09Ti0.91-2xSnxGex)O3(x为质量比)无铅压电陶瓷中, 研究其相结构、微观组织、介电性能和压电性能的影响。结果表明, Sn、Ge掺入晶体内部后仍为单一的钙钛矿结构, 没有明显的第二相产生, 但掺杂引起了晶体内部晶格的变化。随着Sn、Ge掺杂量的逐渐增加, 其压电常数和机电耦合系数呈现先增大后减小的趋势。当Sn、Ge的掺杂量x=0.032时, 该体系的居里温度最高(为122 ℃)。
Abstract
In this paper, the phase structure, microstructure, dielectric properties and piezoelectric properties of (Ba0.85Ca0.15)(Zr0.09Ti0.91-2xSnxGex)O3 lead-free piezoelectric ceramics doped with different amounts of Sn and Ge were studied by the traditional solid-state reaction method. The results show that the crystal is still a single perovskite structure after doping Sn and Ge, and there is no obvious second phase, but the doping causes the change of the internal lattice of the crystal. With the increase of Sn and Ge doping amount, the piezoelectric constant and the electromechanical coupling coefficient show a trend of increasing first and then decreasing. When the doping mass ratio of Sn and Ge is that x=0.032, the highest curie temperature of the system is 122 ℃.
参考文献

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江平, 张静, 褚涛, 李政权, 钟敏, 郭亚雄. Sn-Ge改性BCZT无铅压电陶瓷的结构与性能[J]. 压电与声光, 2022, 44(4): 513. JIANG Ping, ZHANG Jing, CHU Tao, LI Zhengquan, ZHONG Min, GUO Yaxiong. Structures and Properties of Sn-Ge-Modified BCZT Lead-Free Piezoelectric Ceramics[J]. Piezoelectrics & Acoustooptics, 2022, 44(4): 513.

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