该文介绍了一种基于空腔结构的温度补偿型薄膜体声波谐振器(TC-FBAR)。通过在压电层上方生长SiO2温度补偿层，实现谐振器的低温漂。未采用温度补偿的薄膜体声波谐振器，其频率温度系数约为-25×10-6/℃。通过适当的膜层结构设计，可使其频率温度系数在±3×10-6/℃。结果表明，由于温度补偿层的增加，导致器件总体压电效应降低，使谐振器的有效机电耦合系数降低。低温漂谐振器的实现，为窄带低温漂滤波器的研制提供了有效的设计和工艺技术支撑。

A temperature compensated thin film bulk acoustic resonator(TC-FBAR) based on cavity structure is introduced in this paper, By growing a temperature compensation layer (SiO2) above the piezoelectric layer, the low temperature drift of resonator has been realized, The temperature coefficient of frequency of thin film bulk acoustic resonator without temperature compensation is about -25×10-6/℃, Through proper film structure design, the temperature coefficient of frequency can be controlled within ±3×10-6 /℃, It is found that the overall piezoelectric effect of the device is reduced by adding a temperature compensation layer, resulting in the reduction of the effective electromechanical coupling coefficient, The realization of the low temperature drift resonator can provide supports of effective design and process for developing the narrow band filter with low temperature drift,