基于薄膜体声波谐振器(FBAR)技术的滤波器频率温度系数为(-30~-25)×10-6/℃，其电学性能受环境温度影响较大,将降低滤波器在全温工作的性能，限制其应用环境，尤其是对滤波器通带插损与矩形系数要求高的应用场合。该文在常规FBAR滤波器中引入正温度系数的SiO2材料层，通过对滤波器的层叠位置设计及加工工艺等技术的研究，研制出S波段温补型FBAR滤波器器件，其工作频率为3, 1 GHz，插入损耗为2, 0 dB，带外抑制不小于30 dB，频率温度系数为-0, 02×10-6/℃。

The temperature coefficient of the conventional thin film bulk acoustic wave resonator(FBAR) filters is around (-30~-25)×10-6/℃, and the electrical performance varies with the environment temperature, This property degrades the electrical performance of the filter which works in a broad temperature rage, and further confines the applications, especially the applications with stringent requirements in insertion loss in the pass band and roll-off in the transitional band, In this paper,a silicon oxide(SiO2) layer with positive temperature coefficient is introduced in the conventional FBAR filters, Filter stack position technique and filter fabrication technique are researched,and a S-band temperature compensated FBAR filter device is developed, whose operation frequency is 3, 1 GHz, the insertion loss is 2, 0 dB, out of band rejection is better than 30 dB, and the temperature coefficient of frequency is -0, 02×10-6/℃,