量子阱态光电子谱研究的理论模型

王得勇; 刘杰; 贾金锋; 刘洪; 薛其坤

量子电子学报, 2004, 21 (4): 532, 网络出版: 2006-05-15

量子阱态光电子谱研究的理论模型

Theory models for quantum well states in photoemission spectroscopy

论文大纲

王得勇 ^1,2,*刘杰 ¹贾金锋 ²刘洪 ²薛其坤 ²

作者单位

¹ 山东师范大学物理系,山东,济南,250014

² 中国科学院物理研究所表面物理国家重点实验室,北京,100080

摘要

近年来,光电子谱被广泛应用于薄膜中量子阱态的研究.为解释薄膜中分立的量子阱态和薄膜的光电子谱间的关系,发展了一些理论模型.介绍了近自由电子模型、相位积累模型和电子干涉模型等关于薄膜中量子阱态的理论模型,并用它们解释了量子阱态在光电子谱中峰位和线宽.线宽由准粒子寿命的倒数Г以及电子在表面和界面反射系数的和R决定,电子波矢К以及电子在表面和界面相位移之和Ф决定了峰的位置.

Abstract

Recently, photoemission spectroscopy has been widely used for the study of quantum well states (QWS) in films, several models have been developed to explain the relationship of the discrete quantum well states and photoemission spectroscopy. Three theoretical models, nearly free electron model, phase accumulation model, and electron interferometer model, are introduced. Using these models, linewidth and energy position of peaks in photoemission spectroscopy can be explained. The linewidth is determined by the inverse lifetime г of quasiparticle and the reflectivities R at the surface and interface, while the peak position is determined by the wave vector k and total phase shift Ф due to reflection at the surface and interface.

参考文献

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王得勇, 刘杰, 贾金锋, 刘洪, 薛其坤. 量子阱态光电子谱研究的理论模型[J]. 量子电子学报, 2004, 21(4): 532. 王得勇, 刘杰, 贾金锋, 刘洪, 薛其坤. Theory models for quantum well states in photoemission spectroscopy[J]. Chinese Journal of Quantum Electronics, 2004, 21(4): 532.

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