金刚石肖特基二极管的研究进展
[1] ISBERG J, HAMMERSBERG J, JOHANSSON E, et al. High carrier mobility in single-crystal plasma-deposited diamond[J]. Science, 2002, 297(5587): 1670-1672.
[2] 赵正平. 超宽禁带半导体金刚石功率电子学研究的新进展[J]. 半导体技术, 2021, 46(1): 1-14.
[3] BERNHARD D. Low-Pressure Synthetic Diamond[M]. Berlin: Springer, 1998: 331.
[4] SHENAI K, SCOTT R S, BALIGA B J. Optimum semiconductors for high-power electronics[J]. IEEE Transactions on Electron Devices, 1989, 36(9): 1811-1823.
[5] ALEKSOV A, KUBOVIC M, KAEB N, et al. Diamond field effect transistors: concepts and challenges[J]. Diamond and Related Materials, 2003, 12(3/4/5/6/7): 391-398.
[6] DENISENKO A, KOHN E. Diamond power devices. Concepts and limits[J]. Diamond and Related Materials, 2005, 14(3/4/5/6/7): 491-498.
[7] ARKHIPOVA E A, DEMIDOV E V, DROZDOV M N, et al. Ohmic contacts to CVD diamond with boron-doped delta layers[J]. Semiconductors, 2019, 53(10): 1348-1352.
[8] ACHARD J, ARAUJO D, ARNAULT J C, et al. Power electronics device applications of diamond semiconductors[M]. Cambridge: Woodhead Publishing, 2018
[9] TERAJI T, ISOYA J, WATANABE K, et al. Homoepitaxial diamond chemical vapor deposition for ultra-light doping[J]. Materials Science in Semiconductor Processing, 2017, 70: 197-202.
[10] BARJON J, CHIKOIDZE E, JOMARD F, et al. Homoepitaxial boron-doped diamond with very low compensation[J]. Physica Status Solidi (a), 2012, 209(9): 1750-1753.
[11] YAP C M, ANSARI K, XIAO S, et al. Properties of near-colourless lightly boron doped CVD diamond[J]. Diamond and Related Materials, 2018, 88: 118-122.
[12] ISSAOUI R, ACHARD J, WILLIAM L, et al. Thick and widened high quality heavily boron doped diamond single crystals synthetized with high oxygen flow under high microwave power regime[J]. Diamond and Related Materials, 2019, 94: 88-91.
[13] 王若铮, 闫秀良, 彭 博, 等. 高质量硼掺杂单晶金刚石同质外延及电学性质研究[J]. 人工晶体学报, 2022, 51(5): 893-900.
[14] 吴 超, 马志斌, 严 垒, 等. CVD单晶金刚石的研究进展[J]. 金刚石与磨料磨具工程, 2014, 34(1): 57-63.
[15] TERAJI T. High-quality and high-purity homoepitaxial diamond (100) film growth under high oxygen concentration condition[J]. Journal of Applied Physics, 2015, 118(11): 115304.
[16] WANG R Z, PENG B, BAI H, et al. Morphology, defects and electrical properties of boron-doped single crystal diamond under various oxygen concentration[J]. Materials Letters, 2022, 322: 132345.
[17] TANG L, YUE R F, WANG Y. N-type B-S co-doping and S doping in diamond from first principles[J]. Carbon, 2018, 130: 458-465.
[18] LIU D Y, HAO L C, CHEN Z A, et al. Sulfur regulation of boron doping and growth behavior for high-quality diamond in microwave plasma chemical vapor deposition[J]. Applied Physics Letters, 2020, 117(2): 022101.
[19] BOUSSADI A, TALLAIRE A, BRINZA O, et al. Thick heavily boron doped CVD diamond films homoepitaxially grown on (111)-oriented substrates[J]. Diamond and Related Materials, 2017, 79: 108-111.
[20] MORTET V, PERNOT J, JOMARD F, et al. Properties of boron-doped epitaxial diamond layers grown on (110) oriented single crystal substrates[J]. Diamond and Related Materials, 2015, 53: 29-34.
[21] TALLAIRE A, VALENTIN A, MILLE V, et al. Growth of thick and heavily boron-doped (113)-oriented CVD diamond films[J]. Diamond and Related Materials, 2016, 66: 61-66.
[22] TAYLOR A, BALUCHOV S, FEKETE L, et al. Growth and comparison of high-quality MW PECVD grown B doped diamond layers on{118}, {115} and {113}single crystal diamond substrates[J]. Diamond and Related Materials, 2022, 123: 108815.
[23] 王艳丰, 王宏兴. MPCVD单晶金刚石生长及其电子器件研究进展[J]. 人工晶体学报, 2020, 49(11): 2139-2152.
[24] RHODERICK E H, ROTHWARF A. Metal-semiconductor contacts[J]. Physics Today, 1979, 32(5): 66-71.
[25] 赵化彬. AlGaN/GaN肖特基二极管电学及光电特性研究[D]. 西安: 西安电子科技大学, 2020.
[26] KONO S, TERAJI T, KODAMA H, et al. Direct determination of the barrier height of Ti-based ohmic contact on p-type diamond (001)[J]. Diamond and Related Materials, 2015, 60: 117-122.
[27] WANG Y Y, LIU X Q, ZHEN C M, et al. Ohmic contacts and interface properties of Au/Ti/p-diamond prepared by r.f. sputtering[J]. Surface and Interface Analysis, 2000, 29(7): 478-481.
[28] HOFF H A, WAYTENA G L, VOLD C L, et al. Ohmic contacts to semiconducting diamond using a Ti/Pt/Au trilayer metallization scheme[J]. Diamond and Related Materials, 1996, 5(12): 1450-1456.
[29] MANIFOLD S A, KLEMENCIC G, THOMAS E L H, et al. Contact resistance of various metallisation schemes to superconducting boron doped diamond between 1.9 and 300 K[J]. Carbon, 2021, 179: 13-19.
[30] ZHEN C M, WANG X Q, WU X C, et al. Au/p-diamond ohmic contacts deposited by RF sputtering[J]. Applied Surface Science, 2008, 255(5): 2916-2919.
[31] LI F N, ZHANG J W, WANG X L, et al. Barrier heights of Au on diamond with different terminations determined by X-ray photoelectron spectroscopy[J]. Coatings, 2017, 7(7): 88.
[32] WANG W, HU C, LI F N, et al. Palladium Ohmic contact on hydrogen-terminated single crystal diamond film[J]. Diamond and Related Materials, 2015, 59: 90-94.
[33] DAS K, VENKATESAN V, HUMPHREYS T P. Ohmic contacts on diamond by B ion implantation and TiC-Au and TaSi2-Au metallization[J]. Journal of Applied Physics, 1994, 76(4): 2208-2212.
[34] ZHAO D, LI F N, LIU Z C, et al. Effects of rapid thermal annealing on the contact of tungsten/p-diamond[J]. Applied Surface Science, 2018, 443: 361-366.
[35] ZHAO D, LIU Z C, ZHANG X F, et al. Analysis of diamond pseudo-vertical Schottky barrier diode through patterning tungsten growth method[J]. Applied Physics Letters, 2018, 112(9): 092102.
[36] KON S, SCHNEIDER H, ISOIRD K, et al. An assessment of contact metallization for high power and high temperature diamond Schottky devices[J]. Diamond and Related Materials, 2012, 27/28: 23-28.
[37] TERAJI T, KOIDE Y, ITO T. Schottky barrier height and thermal stability of p-diamond (100) Schottky interfaces[J]. Thin Solid Films, 2014, 557: 241-248.
[38] PIERO J C, ARAJO D, FIORI A, et al. Atomic composition of WC/and Zr/O-terminated diamond Schottky interfaces close to ideality[J]. Applied Surface Science, 2017, 395: 200-207.
[39] TERAJI T, GARINO Y, KOIDE Y, et al. Low-leakage p-type diamond Schottky diodes prepared using vacuum ultraviolet light/ozone treatment[J]. Journal of Applied Physics, 2009, 105(12): 126109.
[40] TRAOR A, MURET P, FIORI A, et al. Zr/oxidized diamond interface for high power Schottky diodes[J]. Applied Physics Letters, 2014, 104(5): 052105.
[41] POLYAKOV A, SMIRNOV N, TARELKIN S, et al. Electrical properties of diamond platinum vertical Schottky barrier diodes[J]. Materials Today: Proceedings, 2016, 3: S159-S164.
[42] UEDA K, KAWAMOTO K, SOUMIYA T, et al. High-temperature characteristics of Ag and Ni/diamond Schottky diodes[J]. Diamond and Related Materials, 2013, 38: 41-44.
[43] LI F N, LIU J W, ZHANG J W, et al. Measurement of barrier height of Pd on diamond (100) surface by X-ray photoelectron spectroscopy[J]. Applied Surface Science, 2016, 370: 496-500.
[44] IKEDA K, UMEZAWA H, RAMANUJAM K, et al. Thermally stable Schottky barrier diode by Ru/diamond[J]. Applied Physics Express, 2009, 2: 011202.
[45] HU C, LIU Z C, ZHANG J W, et al. Diamond Schottky barrier diode with fluorine- and oxygen-termination[J]. MRS Advances, 2016, 1(16): 1125-1130.
[46] ZHAO D, HU C, LIU Z C, et al. Diamond MIP structure Schottky diode with different drift layer thickness[J]. Diamond and Related Materials, 2017, 73: 15-18.
[47] GILDENBLAT G S, GROT S A, WRONSKI C R, et al. Electrical characteristics of Schottky diodes fabricated using plasma assisted chemical vapor deposited diamond films[J]. Applied Physics Letters, 1988, 53(7): 586-588.
[48] GILDENBLAT G S, GROT S A, WRONSKI C R, et al. Schottky diodes with thin film diamond base[C]//Technical Digest, International Electron Devices Meeting. December 11-14, 1988, San Francisco, CA, USA. IEEE, 2002: 626-629.
[49] GILDENBLAT G S, GROT S A, HATFIELD C W, et al. High-temperature Schottky diodes with thin-film diamond base[J]. IEEE Electron Device Letters, 1990, 11(9): 371-372.
[50] EBERT W, VESCAN A, BORST T H, et al. Epitaxial diamond Schottky barrier diode with on/off current ratios in excess of 107 at high temperatures[C]//Proceedings of 1994 IEEE International Electron Devices Meeting. December 11-14, 1994, San Francisco, CA, USA. IEEE, 2002: 419-422.
[51] PEARCE S R J, HENLEY S J, CLAEYSSENS F, et al. Production of nanocrystalline diamond by laser ablation at the solid/liquid interface[J]. Diamond and Related Materials, 2004, 13(4/5/6/7/8): 661-665.
[52] TWITCHEN D J, WHITEHEAD A J, COE S E, et al. High-voltage single-crystal diamond diodes[J]. IEEE Transactions on Electron Devices, 2004, 51(5): 826-828.
[53] IKEDA K, UMEZAWA H, SHIKATA S. Edge termination techniques for p-type diamond Schottky barrier diodes[J]. Diamond and Related Materials, 2008, 17(4/5): 809-812.
[54] VOLPE P N, MURET P, PERNOT J, et al. High breakdown voltage Schottky diodes synthesized on p-type CVD diamond layer[J]. Physica Status Solidi (a), 2010, 207(9): 2088-2092.
[55] REINKE P, BENKHELIFA F, KIRSTE L, et al. Influence of different surface morphologies on the performance of high-voltage, low-resistance diamond Schottky diodes[J]. IEEE Transactions on Electron Devices, 2020, 67(6): 2471-2477.
[56] SHIGEMATSU S, OISHI T, SEKI Y, et al. Schottky barrier diodes fabricated on high-purity type-IIa CVD diamond substrates using an all-ion-implantation process[J]. Japanese Journal of Applied Physics, 2021, 60(5): 050903.
[57] WANG J, ZHAO D, SHAO G Q, et al. Fabrication of dual-barrier planar structure diamond Schottky diodes by rapid thermal annealing[J]. IEEE Transactions on Electron Devices, 2021, 68(3): 1176-1180.
[58] WANG J, SHAO G Q, LI Q, et al. Vertical diamond trench MOS barrier Schottky diodes with high breakdown voltage[J]. IEEE Transactions on Electron Devices, 2022, 69(11): 6231-6235.
[59] SAHA N C, IRIE Y, SEKI Y, et al. 1651-V all-ion-implanted Schottky barrier diode on heteroepitaxial diamond with 3.6×10 h on/off ratio[J]. IEEE Electron Device Letters, 2023, 44(2): 293-296.
[60] TOKUYUKI T E R A J I, SATOSHI K O I Z U M I, YASUO K O I D E, et al. Electric field breakdown of lateral Schottky diodes of diamond[J]. Japanese Journal of Applied Physics, 2007, 46(8/11): L196-L198.
[61] KUMARESAN R, UMEZAWA H, SHIKATA S. Vertical structure Schottky barrier diode fabrication using insulating diamond substrate[J]. Diamond and Related Materials, 2010, 19(10): 1324-1329.
[62] KUMARESAN R, UMEZAWA H, SHIKATA S. Parasitic resistance analysis of pseudovertical structure diamond Schottky barrier diode[J]. Physica Status Solidi (a), 2010, 207(8): 1997-2001.
[63] BORMASHOV V S, TERENTIEV S A, BUGA S G, et al. Thin large area vertical Schottky barrier diamond diodes with low on-resistance made by ion-beam assisted lift-off technique[J]. Diamond and Related Materials, 2017, 75: 78-84.
[64] 郁鑫鑫, 周建军, 王艳丰, 等. 高电流密度金刚石肖特基势垒二极管研究[J]. 固体电子学研究与进展, 2019, 39(2): 77-80+85.
[65] ROY S, BHATTACHARYYA A, RANGA P, et al. High-k oxide field-plated vertical (001) β-Ga2O3 Schottky barrier diode with baliga’s figure of merit over 1 GW/cm2[J]. IEEE Electron Device Letters, 2021, 42(8): 1140-1143.
[66] JIN F Y, CHEN P H, HUNG W C, et al. Analysis of breakdown-voltage increase on SiC junction barrier Schottky diode under negative bias stress[J]. IEEE Transactions on Electron Devices, 2023, 70(1): 191-195.
[67] SHANKAR B, GUPTA S K, TAUBE W R, et al. Dependence of field plate parameters on dielectric constant in a 4H-SiC Schottky diode[C]//2014 IEEE 2nd International Conference on Emerging Electronics (ICEE). December 3-6, 2014, Bengaluru, India. IEEE, 2015: 1-3.
[68] ZHANG Y L, LIU P F, ZHANG J, et al. 1.2-kV 4H-SiC JBS diodes engaging P-type retrograde implants[J]. IEEE Transactions on Electron Devices, 2022, 69(12): 6963-6970.
[69] UMEZAWA H, NAGASE M, KATO Y, et al. High temperature application of diamond power device[J]. Diamond and Related Materials, 2012, 24: 201-205.
[70] UMEZAWA H, NAGASE M, KATO Y, et al. Diamond vertical Schottky barrier diode with Al2O3 field plate[J]. Materials Science Forum, 2012, 717/718/719/720: 1319-1321.
[71] ZHAO D, LIU Z C, WANG J, et al. Reduction in reverse leakage current of diamond vertical Schottky barrier diode using SiNX field plate structure[J]. Results in Physics, 2019, 13: 102250.
[72] YU X X, ZHOU J J, WANG Y F, et al. Breakdown enhancement of diamond Schottky barrier diodes using boron implanted edge terminations[J]. Diamond and Related Materials, 2019, 92: 146-149.
[73] ZHANG S M, LI Q, WANG J, et al. High breakdown electric field diamond Schottky barrier diode with SnO2 field plate[J]. IEEE Transactions on Electron Devices, 2022, 69(12): 6917-6921.
[74] LI Q, WANG J, SHAO G Q, et al. Breakdown voltage enhancement of vertical diamond Schottky barrier diode with annealing method and AlO field plate structure[J]. IEEE Electron Device Letters, 2022, 43(11): 1937-1940.
[75] LI Q, WANG J, CHEN G Q, et al. Breakdown voltage enhancement of vertical diamond Schottky barrier diodes by selective growth nitrogen-doped diamond field plate[J]. Diamond and Related Materials, 2023, 134: 109799.
[76] AL-AHMADI N A. Metal oxide semiconductor-based Schottky diodes: a review of recent advances[J]. Materials Research Express, 2020, 7(3): 032001.
[77] SHAO G Q, WANG J, LIU Z C, et al. Performance-improved vertical Zr/diamond Schottky barrier diode with lanthanum hexaboride interfacial layer[J]. IEEE Electron Device Letters, 2021, 42(9): 1366-1369.
[78] WANG J, SHAO G Q, CHEN G Q, et al. Schottky barrier height modulation of Zr/p-diamond Schottky contact by inserting ultrathin atomic layer-deposited Al2O3[J]. IEEE Transactions on Electron Devices, 2021, 68(12): 5995-6000.
[79] ZHANG S M, WANG J, LI Q, et al. Improved-performance diamond Schottky barrier diode with tin oxide interlayer[J]. IEEE Transactions on Electron Devices, 2022, 69(11): 6260-6264.
[80] REZEK B, WATANABE H, NEBEL C E. High carrier mobility on hydrogen terminated 〈100〉 diamond surfaces[J]. Applied Physics Letters, 2006, 88(4): 042110.
[81] TSUGAWA K, NODA H, HIROSE K, et al. Schottky barrier heights, carrier density, and negative electron affinity of hydrogen-terminated diamond[J]. Physical Review B, 2010, 81(4): 045303.
[82] MAIER F, RISTEIN J, LEY L. Electron affinity of plasma-hydrogenated and chemically oxidized diamond (100) surfaces[J]. Physical Review B, 2001, 64(16): 165411.
[83] RIETWYK K J, WONG S L, CAO L, et al. Work function and electron affinity of the fluorine-terminated (100) diamond surface[J]. Applied Physics Letters, 2013, 102(9): 091604.
[84] UEDA K, KAWAMOTO K, ASANO H. High-temperature and high-voltage characteristics of Cu/diamond Schottky diodes[J]. Diamond and Related Materials, 2015, 57: 28-31.
[85] ZHAO D, LIU Z C, WANG J, et al. Fabrication of dual-termination Schottky barrier diode by using oxygen-/ fluorine-terminated diamond[J]. Applied Surface Science, 2018, 457: 411-416.
[86] ZHAO D, LIU Z C, WANG J, et al. Performance improved vertical diamond Schottky barrier diode with fluorination-termination structure[J]. IEEE Electron Device Letters, 2019, 40(8): 1229-1232.
[87] LIU Z C, YI W Y, ZHAO D, et al. Diamond avalanche diodes for obtaining high-voltage pulse with subnanosecond front edge[J]. AIP Advances, 2020, 10(6): 065015.
[88] BIN ABU BAKAR M H, TRAORE A, GUO J J, et al. Optically detected magnetic resonance of nitrogen-vacancy centers in vertical diamond Schottky diodes[J]. Japanese Journal of Applied Physics, 2022, 61(SC): SC1061.
[89] SURDI H, KOECK F A M, AHMAD M F, et al. Demonstration and analysis of ultrahigh forward current density diamond diodes[J]. IEEE Transactions on Electron Devices, 2022, 69(1): 254-261.
[90] HAZDRA P, LAPOSA A, OBNˇ Z, et al. Pseudo-vertical Mo/Au Schottky diodes on {113} oriented boron doped homoepitaxial diamond layers[J]. Diamond and Related Materials, 2022, 126: 109088.
[91] KWAK T, HAN S H, CHOI U, et al. Diamond Schottky barrier diode fabricated on high-crystalline quality misoriented heteroepitaxial (001) diamond substrate[J]. Diamond and Related Materials, 2023, 133: 109750.
[92] SHAO G Q, WANG J, WANG Y F, et al. Inhomogeneous heterojunction performance of Zr/diamond Schottky diode with Gaussian distribution of barrier heights for high sensitivity temperature sensor[J]. Sensors and Actuators A: Physical, 2022, 347: 113906.
彭博, 李奇, 张舒淼, 樊叔维, 王若铮, 王宏兴. 金刚石肖特基二极管的研究进展[J]. 人工晶体学报, 2023, 52(5): 732. PENG Bo, LI Qi, ZHANG Shumiao, FAN Shuwei, WANG Ruozheng, WANG Hongxing. Research Progress of Diamond Schottky Barrier Diodes[J]. Journal of Synthetic Crystals, 2023, 52(5): 732.