高温扩散工艺制备带隙可调的β-(AlxGa1-x)2O3薄膜
[1] 郭道友, 李培刚, 陈政委, 等. 超宽禁带半导体β-Ga2O3及深紫外透明电极、日盲探测器的研究进展[J]. 物理学报, 2019, 68(7): 078501.
[2] MA J L, XIA X C, YAN S, et al. Stable and self-powered solar-blind ultraviolet photodetectors based on a Cs3Cu2I5/β-Ga2O3 heterojunction prepared by dual-source vapor codeposition[J]. ACS Applied Materials & Interfaces, 2021, 13(13): 15409-15419.
[3] XIE C, LU X T, LIANG Y, et al. Patterned growth of β-Ga2O3 thin films for solar-blind deep-ultraviolet photodetectors array and optical imaging application[J]. Journal of Materials Science & Technology, 2021, 72: 189-196.
[5] JEONG S H, VU T K O, KIM E K. Post-annealing effects on Si-doped Ga2O3 photodetectors grown by pulsed laser deposition[J]. Journal of Alloys and Compounds, 2021, 877: 160291.
[6] BHALERAO S R, LUPO D, BERGER P R. Flexible, gallium oxide (Ga2O3) thin film transistors (TFTs) and circuits for the Internet of Things (IoT)[C]//2021 IEEE International Flexible Electronics Technology Conference (IFETC). August 8-11, 2021, Columbus, OH, USA. IEEE, 2021: 32-34.
[7] CHEN Z W, WANG X, NODA S, et al. Effects of dopant contents on structural, morphological and optical properties of Er doped Ga2O3 films[J]. Superlattices and Microstructures, 2016, 90: 207-214.
[8] CHEN Z W, WANG X, ZHANG F B, et al. Temperature dependence of luminescence spectra in europium doped Ga2O3 film[J]. Journal of Luminescence, 2016, 177: 48-53.
[9] DENG G F, SAITO K, TANAKA T, et al. Low driven voltage green electroluminescent device based on Er∶Ga2O3/GaAs heterojunction[J]. Optical Materials, 2021, 116: 111078.
[10] HIGASHIWAKI M, SASAKI K, MURAKAMI H, et al. Recent progress in Ga2O3 power devices[J]. Semiconductor Science and Technology, 2016, 31(3): 034001.
[11] YANG Z C, WU J W, LI P J, et al. Resistive random access memory based on gallium oxide thin films for self-powered pressure sensor systems[J]. Ceramics International, 2020, 46(13): 21141-21148.
[12] LI X, YANG J G, MA H P, et al. Atomic layer deposition of Ga2O3/ZnO composite films for high-performance forming-free resistive switching memory[J]. ACS Applied Materials & Interfaces, 2020, 12(27): 30538-30547.
[13] 吕 瑜. 蓝宝石衬底上Ga2O3薄膜的制备及性质研究[D]. 济南: 山东大学, 2012.
[14] 王新月, 张胜男, 霍晓青, 等. 超宽禁带半导体β-Ga2O3相关研究进展[J]. 人工晶体学报, 2021, 50(11): 1995-2012.
[16] PEELAERS H, VARLEY J B, SPECK J S, et al. Structural and electronic properties of Ga2O3-Al2O3 alloys[J]. Applied Physics Letters, 2018, 112(24): 242101.
[17] KOKUBUN Y, MIURA K, ENDO F, et al. Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors[J]. Applied Physics Letters, 2007, 90(3): 031912.
[18] LI H, YUAN S H, HUANG T M, et al. Impact of thermal-induced sapphire substrate erosion on material and photodetector characteristics of sputtered Ga2O3 films[J]. Journal of Alloys and Compounds, 2020, 823: 153755.
[19] WENG W Y, HSUEH T J, CHANG S J, et al. An (AlxGa1-x)2O3 metal-semiconductor-metal VUV photodetector[J]. IEEE Sensors Journal, 2011, 11(9): 1795-1799.
[20] ZHANG Y W, NEAL A, XIA Z B, et al. Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures[J]. Applied Physics Letters, 2018, 112(17): 173502.
[21] MATSUZAKI K, YANAGI H, KAMIYA T, et al. Field-induced current modulation in epitaxial film of deep-ultraviolet transparent oxide semiconductor Ga2O3[J]. Applied Physics Letters, 2006, 88(9): 092106.
[22] KRANERT C, JENDERKA M, LENZNER J, et al. Lattice parameters and Raman-active phonon modes of β-(AlxGa1-x)2O3[J]. Journal of Applied Physics, 2015, 117(12): 125703.
[23] KIM H W, KIM N H. Annealing effects on the properties of Ga2O3 thin films grown on sapphire by the metal organic chemical vapor deposition[J]. Applied Surface Science, 2004, 230(1/2/3/4): 301-306.
[24] GOYAL A, YADAV B S, THAKUR O P, et al. Effect of annealing on β-Ga2O3 film grown by pulsed laser deposition technique[J]. Journal of Alloys and Compounds, 2014, 583: 214-219.
[25] MOON S Y, JUNG S W, LEE H J, et al. Effect of nitrogen and oxygen annealing on (Al0.1Ga0.9)2O3/4H-SiC heterojunction diodes[J]. Thin Solid Films, 2022, 751: 139204.
[26] SHEN H, BASKARAN K, YIN Y N, et al. Effect of thickness on the performance of solar blind photodetectors fabricated using PLD grown β-Ga2O3 thin films[J]. Journal of Alloys and Compounds, 2020, 822: 153419.
[27] 蔡文为, 刘祥炜, 王 浩, 等. 生长气压对分子束外延β-Ga2O3薄膜特性的影响[J]. 人工晶体学报, 2022, 51(7): 1152-1157.
[29] TAO J J, LU H L, GU Y, et al. Investigation of growth characteristics, compositions, and properties of atomic layer deposited amorphous Zn-doped Ga2O3 films[J]. Applied Surface Science, 2019, 476: 733-740.
[30] XIAO H L, SHAO G Q, SAI Q L, et al. Wide bandgap engineering of β-(Al, Ga)2O3 mixed crystals[J]. Journal of Inorganic Materials, 2016, 31(11): 1258.
谭黎, 张俊, 张敏, 赵荣力, 邓朝勇, 崔瑞瑞. 高温扩散工艺制备带隙可调的β-(AlxGa1-x)2O3薄膜[J]. 人工晶体学报, 2023, 52(2): 281. TAN Li, ZHANG Jun, ZHANG Min, ZHAO Rongli, DENG Chaoyong, CUI Ruirui. β-(AlxGa1-x)2O3 Thin Films with Tunable Band Gap Prepared by High Temperature Diffusion[J]. Journal of Synthetic Crystals, 2023, 52(2): 281.