Flexible devices provide advantages such as conformability, portability, and low cost. Paper-based electronics offers a number of advantages for many applications. It is lightweight, inexpensive, and biodegradable, making it an ideal choice for disposable electronics. In this work, we propose a novel configuration of photodetectors using paper as flexible substrates and amorphous Ga2O3 as the active materials, respectively. The photoresponse characteristics are investigated systematically. A decent responsivity yield and a specific detectivity of up to 66 mA/W and 3×1012 Jones were obtained at a low operating voltage of 10 V. The experiments also demonstrate that neither the twisting nor bending deformation can bring obvious performance degradation to the device. This work presents a candidate strategy for the application of conventional paper substrates to low-cost flexible solar-blind photodetectors, showing the potential of being integrated with other materials to create interactive flexible circuits.

利用射频磁控溅射法制备了掺铒Ga₂O₃薄膜，研究了不同氧化铒靶溅射功率和不同退火温度下薄膜的发光特性，发现在氧化铒靶溅射功率为40 W以及退火温度达到600 ℃时薄膜显示出良好的光致发光强度。为了有效避免直接蚀刻掺铒薄膜层导致的表面粗糙等问题，设计了沟道型以及脊型掺铒Ga₂O₃薄膜波导结构，并使用紫外光刻和等离子蚀刻技术制备相应的平面波导，使用截断法测得4 μm宽的掺铒Ga₂O₃波导在1 310 nm处的光学损耗最小为1.26 dB/cm。实验结果表明掺铒Ga₂O₃波导作为片上光学放大器件具有良好的应用前景。

日盲紫外探测器在**和民用领域均具有广阔的应用前景。基于宽禁带半导体材料的日盲紫外探测器具有无需昂贵的滤光片、工作电压低、全固态、体积小、重量轻、抗干扰能力强、工作温度范围广等特点，是公认的新一代紫外探测器。在众多的宽禁带半导体材料中，以Ga₂O₃作为典型代表的镓基氧化物材料因其优异的电学和光电特性已经成为近年来微电子学和光电子学领域的研究热点，特别是其本征日盲、耐高温、耐高压、化学稳定性好等优异特点使得该类材料在日盲紫外光电探测领域展现出巨大的发展潜力。鉴于此，本文综述了不同晶体结构的Ga₂O₃、镓酸盐氧化物、镓锡氧化物、镓铝氧化物等镓基氧化物薄膜及其日盲紫外探测器研究进展。

Gallium oxide (Ga₂O₃) based flexible heterojunction type deep ultraviolet (UV) photodetectors show excellent solar-blind photoelectric performance, even when not powered, which makes them ideal for use in intelligent wearable devices. However, traditional flexible photodetectors are prone to damage during use due to poor toughness, which reduces the service life of these devices. Self-healing hydrogels have been demonstrated to have the ability to repair damage and their combination with Ga₂O₃ could potentially improve the lifetime of the flexible photodetectors while maintaining their performance. Herein, a novel self-healing and self-powered flexible photodetector has been constructed onto the hydrogel substrate, which exhibits an excellent responsivity of 0.24 mA/W under 254 nm UV light at zero bias due to the built-in electric field originating from the PEDOT: PSS/Ga₂O₃ heterojunction. The self-healing of the Ga₂O₃ based photodetector was enabled by the reversible property of the synthesis of agarose and polyvinyl alcohol double network, which allows the photodetector to recover its original configuration and function after damage. After self-healing, the photocurrent of the photodetector decreases from 1.23 to 1.21 μA, while the dark current rises from 0.95 to 0.97 μA, with a barely unchanged of photoresponse speed. Such a remarkable recovery capability and the photodetector’s superior photoelectric performance not only significantly enhance a device lifespan but also present new possibilities to develop wearable and intelligent electronics in the future.

We demonstrate superb large-area vertical β-Ga₂O₃ SBDs with a Schottky contact area of 1 × 1 mm² and obtain a high-efficiency DC–DC converter based on the device. The β-Ga₂O₃ SBD can obtain a forward current of 8 A with a forward voltage of 5 V, and has a reverse breakdown voltage of 612 V. The forward turn-on voltage (V_F) and the on-resistance (R_on) are 1.17 V and 0.46 Ω, respectively. The conversion efficiency of the β-Ga₂O₃ SBD-based DC–DC converter is 95.81%. This work indicates the great potential of Ga₂O₃ SBDs and relevant circuits in power electronic applications.