该文研制了一款频率3, 4 GHz的S波段声表面波(SAW)滤波器。该滤波器采用一种由新型谐振器构成的阻抗元结构，能提升抗热释电静电损伤能力，用时可在一定程度上提升器件的功率承受能力。同时研制了尺寸为2, 0 mm×1, 6 mm的芯片级封装(CSP)基板。采用倒装焊工艺实现了芯片与CSP基板的电连接，降低了电磁寄生影响。结果表明，研制的SAW滤波器频率为3, 408 GHz，插损为2, 23 dB，8 GHz远端阻带大于30 dB，且实测的功率承受能力达到30 dBm。

An S band surface acoustic wave(SAW) filter with center frequency of 3, 4 GHz was developed in this work, The filter adopted an impedance element structure composed of a new type of resonator, which can improve the resistance to electrostatic damage(ESD) protection of pyroelectric effect, and improve the power handling ability to a certain extent, Furthermore,a kind of chip scale packaging(CSP) substrate with size of 2, 0 mm×1, 6 mm was developed, The electric connection between the chip and CSP substrate was realized by the flip-chip process, thus the electromagnetic parasitic influence was reduced, The developed S band SAW filter has center frequency of 3, 408 GHz,insertion loss of 2, 23 dB, above 30 dB the stopband suppression of greater than 30 dB at 8 GHz at the far end, the measured power handling ability of 30 dBm,