红外与毫米波学报, 2002, 21 (1): 28, 网络出版: 2006-05-10
ZnSeTe/ZnSe量子阱中Te等电子陷阱的静压光子发光谱研究
PHOTOLUMINESCENCE OF Te ISOELECTRONIC TRAPS IN ZnSeTe/ZnSe QUANTUM WELLS UNDER HYDROSTATIC PRESSURE
摘要
测量了ZnSe0.92Te0.08/ZnSe超晶格量子阱材料在77K时0～7.8GPa静压下的光致发光谱.观察到ZnSe0.92Te0.08阱层中Te等电子陷阱上的束缚激子发光,发现它的压力系数比ZnSe带边发光的压力系数小约50%,表明Te等电子陷阱对激子的束缚势是相当局域的.还观察到了激子在ZnSe0.92Te0.08阱层中的Te等电子陷阱能级与相邻(CdSe)1/(ZnSe)3短周期超晶格之间的转移现象.
Abstract
The photoluminescence (PL) of ZnSe 0.92Te 0.08?ZnSe superlattice quantum wells at 77K under hydrostatic pressure up to 7.8 GPa was studied. Strong PL peaks from excitons trapped in isoelectronic traps in ZnSe 0.92Te 0.08 were observed. It was found that the pressure coefficients of the PL peaks from Te traps are about half of that of ZnSe. It demonstrates the localized characteristic of the potential of Te isoelectronic traps. The excitons transition between Te traps in ZnSe 1-xTe x and (CdSe) 1?(ZnSe) 3 superlattice was also investigated.
方再利, 李国华, 韩和相, 丁琨, 陈晔, 彭中灵, 袁诗鑫. ZnSeTe/ZnSe量子阱中Te等电子陷阱的静压光子发光谱研究[J]. 红外与毫米波学报, 2002, 21(1): 28. 方再利, 李国华, 韩和相, 丁琨, 陈晔, 彭中灵, 袁诗鑫. PHOTOLUMINESCENCE OF Te ISOELECTRONIC TRAPS IN ZnSeTe/ZnSe QUANTUM WELLS UNDER HYDROSTATIC PRESSURE[J]. Journal of Infrared and Millimeter Waves, 2002, 21(1): 28.
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