锑化铟是中波红外探测应用较广的材料。抛光片的表面粗糙度是影响器件性能的关键指标。研究了锑化铟化学机械抛光(Chemical Mechanical Polishing, CMP)液的pH值、氧化剂比例以及抛光液流速对锑化铟抛光片表面粗糙度的影响，并结合原子力显微镜(Atomic Force Microscope, AFM)和表面轮廓仪测试对抛光片的表面粗糙度进行了表征和优化。结果表明，当pH值为8、氧化剂比例为0.75%、抛光液流速为200 L/min时，InSb晶片的表面粗糙度为1.05 nm(AFM)，同时晶片的抛光宏观质量较好。

Indium antimonide (InSb) is a widely used material in mid-wave infrared detection. The surface roughness of polishing wafer is the key index that affects the performance of devices. The influence of pH value of InSb chemical mechanical polishing solution, the proportion of oxidant and the flow rate of the polishing solution on the surface roughness of InSb polishing wafer were studied. The surface roughness of the polishing wafer was characterized and optimized by atomic force microscope(AFM) and the surface profilometer. The results show that the surface roughness of InSb wafer is 1.05 nm (AFM) when the pH is 8, the proportion of oxidant is 0.75%, and the flow rate of polishing solution is 200 L/min. At the same time, the polishing macro quality of the wafer is better.