采用中频(MF,40 kHz)双S枪磁控反应溅射制备出了氮化铝(AlN)压电薄膜; 采用直流磁控溅射法制作了Mo电极薄膜; 采用脉冲DC磁控溅射Au、Cr、Al靶分别制作Au/Cr底电极薄膜及Al/Cr顶电极薄膜。通过对AlN压电薄膜、Mo及Au电极薄膜进行了X线衍射(XRD)分析, 结果表明, 复合AlN压电薄膜(002)面、Mo薄膜(110)面及Au薄膜(111)面择优取向优良, 说明选用Al/Cr/AlN/Au/Cr/YAG复合结构压电薄膜能研制出Ku波段及K波段声体波微波延迟线(BAWDL), 其Ku及K波段BAWDL器件插入损耗分别低至43.7 dB、54.6 dB。

The piezoelectric AlN thin films were prepared using middle frequency(MF,40 kHz) magnetron reactive sputtering process with dual s-gun structure. The electrode Mo thin films were made using DC magnetron sputtering process. The Au / Cr bottom electrode films and Al/Cr top electrode films were prepared by using pulse DC magnetron sputtering process to sputter gold (Au), chromium (Cr), aluminum (Al) targets. The AlN, Mo and Au thin films were analyzed by X-ray diffraction(XRD). The results show that the (002) crystal surface of the composite aluminum nitride AlN piezoelectric film, the (110) surface of Mo film and the (111) surface of Au film have excellent preferred orientations, indicating that the Al/Cr/AlN/Au/Cr/YAG composite piezoelectric film can be used to develop Ku-band and K-band bulk acoustic wave microwave delay lines (BAWDL), and the insertion losses are as low as 43.7 dB and 54.6 dB, respectively.