We demonstrate single-mode microdisk lasers in the telecom band with ultralow thresholds on erbium-ytterbium co-doped thin-film lithium niobate (TFLN). The active microdisk was fabricated with high-Q factors by photolithography-assisted chemomechanical etching. Thanks to the erbium-ytterbium co-doping providing high optical gain, the ultralow loss nanostructuring, and the excitation of high-Q coherent polygon modes, which suppresses multimode lasing and allows high spatial mode overlap between pump and lasing modes, single-mode laser emission operating at 1530 nm wavelength was observed with an ultralow threshold, under a 980-nm-band optical pump. The threshold was measured as low as 1 µW, which is one order of magnitude smaller than the best results previously reported in single-mode active TFLN microlasers. The conversion efficiency reaches 4.06 × 10^-3, which is also the highest value reported in single-mode active TFLN microlasers.

We demonstrate integrated lithium niobate (LN) microring resonators with Q factors close to the intrinsic material absorption limit of LN. The microrings are fabricated on pristine LN thin-film wafers thinned from LN bulk via chemo-mechanical etching without ion slicing and ion etching. A record-high Q factor up to 108 at the wavelength of 1550 nm is achieved because of the ultra-smooth interface of the microrings and the absence of ion-induced lattice damage, indicating an ultra-low waveguide propagation loss of ∼0.0034dB/cm. The ultra-high Q microrings will pave the way for integrated quantum light source, frequency comb generation, and nonlinear optical processes.

We demonstrate high-quality (intrinsic Q factor ∼2.8 × 10⁶) racetrack microresonators fabricated on lithium niobate thin film with a free spectral range (FSR) of ∼86 pm. By integrating microelectrodes alongside the two straight arms of the racetrack resonator, the resonance wavelength around 1550 nm can be red shifted by 92 pm when the electric voltage is raised from -100 V to 100 V. The microresonators with the tuning range spanning over a full FSR are fabricated using photolithography assisted chemo-mechanical etching.