近年来，杂化钙钛矿半导体材料由于其带隙可调、吸收系数高、载流子迁移率高、成本低廉等诸多优点，在光电器件领域备受青睐，如太阳能电池、电致发光器件、光电探测器等。其中，钙钛矿单晶薄膜因其无晶界、杂质和缺陷含量低等特点，展现出更为优异的光学、电学特性，成为制备高性能光电器件的理想材料体系。然而，钙钛矿单晶薄膜常采用空间限域法直接生长在空穴传输层上，不可避免地将导致界面缺陷和载流子层间输运等问题，严重制约了钙钛矿单晶薄膜光电探测器的性能。为此，本文通过引入模板剥离法工艺技术，在钙钛矿单晶薄膜两侧分别蒸镀功能层材料，制备了结构为Cu/BCP/C₆₀/MAPbBr₃/MoO₃/Ag的钙钛矿单晶薄膜光电探测器。基于模板剥离法，两侧蒸镀的功能层与钙钛矿单晶薄膜接触紧密，将有效改善载流子的注入和传输；同时，优化的器件结构以及考虑能带匹配等因素可实现高灵敏、响应快速的钙钛矿单晶薄膜光电探测器。改进后器件的开关比高达3.1 × 10³，响应度可达7.15 A/W，探测率为5.39 × 10¹² Jones，外量子效率达到1794%。该工作为进一步改善和提升钙钛矿单晶薄膜光电探测器的探测性能提供了一种可行性技术方案。

Deep-ultraviolet (DUV) disinfection technology provides an expeditious and efficient way to suppress the transmission of coronavirus disease 2019 (COVID-19). However, the influences of viral variants (Delta and Omicron) and low temperatures on the DUV virucidal efficacy are still unknown. Here, we developed a reliable and uniform planar light source comprised of 275-nm light-emitting diodes (LEDs) to investigate the effects of these two unknown factors and delineated the principle behind different disinfection performances. We found the lethal effect of DUV at the same radiation dose was reduced by the cryogenic environment, and a negative-U large-relaxation model was used to explain the difference in view of the photoelectronic nature. The chances were higher in the cryogenic environment for the capture of excited electrons within active genetic molecules back to the initial photo-ionised positions. Additionally, the variant of Omicron required a significantly higher DUV dose to achieve the same virucidal efficacy, and this was thanks to the genetic and proteinic characteristics of the Omicron. The findings in this study are important for human society using DUV disinfection in cold conditions (e.g., the food cold chain logistics and the open air in winter), and the relevant DUV disinfection suggestion against COVID-19 is provided.

手性有机半导体由于具有光谱可调和易于加工的优点，在小型化和集成化的圆偏振光检测中具有广泛的应用前景。本文通过控制手性异腈（PPI）的加入合成了聚（3-己基噻吩-嵌段-聚（苯基异氰））（P3HT₈₀和P3HT₈₀-PPI（L）₃₀）。实验结果证明了两种半导体聚合物被成功合成。测试了两种半导体聚合物的光学特性，发现嵌段聚合物P3HT₈₀-PPI（L）₃₀具有手性光学活性。制备了基于有机场效应晶体管的圆偏振光探测器，研究器件对于450 nm的圆偏振光旋向的区分性能。实验结果表明，手性异腈（PPI）的加入虽然降低了P3HT₈₀的电学性能，但引入了手性光学活性，使基于P3HT₈₀-PPI（L）₃₀制备的器件能够区分圆偏振光的旋向，并且在450 nm的光电流不对称因子g_res达到了0.083。

With the emergence of new materials for high-efficiency organic solar cells (OSCs), understanding and finetuning the interface energetics become increasingly important. Precise determination of the so-called pinning energies, one of the critical characteristics of the material to predict the energy level alignment (ELA) at either electrode/organic or organic/organic interfaces, are urgently needed for the new materials. Here, pinning energies of a wide variety of newly developed donors and non-fullerene acceptors (NFAs) are measured through ultraviolet photoelectron spectroscopy. The positive pinning energies of the studied donors and the negative pinning energies of NFAs are in the same energy range of 4.3?4.6 eV, which follows the design rules developed for fullerene-based OSCs. The ELA for metal/organic and inorganic/organic interfaces follows the predicted behavior for all of the materials studied. For organic–organic heterojunctions where both the donor and the NFA feature strong intramolecular charge transfer, the pinning energies often underestimate the experimentally obtained interface vacuum level shift, which has consequences for OSC device performance.With the emergence of new materials for high-efficiency organic solar cells (OSCs), understanding and finetuning the interface energetics become increasingly important. Precise determination of the so-called pinning energies, one of the critical characteristics of the material to predict the energy level alignment (ELA) at either electrode/organic or organic/organic interfaces, are urgently needed for the new materials. Here, pinning energies of a wide variety of newly developed donors and non-fullerene acceptors (NFAs) are measured through ultraviolet photoelectron spectroscopy. The positive pinning energies of the studied donors and the negative pinning energies of NFAs are in the same energy range of 4.3?4.6 eV, which follows the design rules developed for fullerene-based OSCs. The ELA for metal/organic and inorganic/organic interfaces follows the predicted behavior for all of the materials studied. For organic–organic heterojunctions where both the donor and the NFA feature strong intramolecular charge transfer, the pinning energies often underestimate the experimentally obtained interface vacuum level shift, which has consequences for OSC device performance.

三五族化合物半导体具有丰富的特性，使其在电子学、光电子学以及光子学领域获得了各种应用，这些都源自于三族元素和五族元素构成之二元系的各种魔幻组合形成的多变特性。本文基于二元系砷化物、磷化物及锑化物，对其构成的各种三元系、四元系和五元系的特征进行了几何图示阐述，主要涉及其带隙、晶格常数及其与不同衬底的晶格匹配区域。对氮化物和稀氮、铋化物和稀铋以及硼化物的一些特性也进行了简要讨论。通过对整个三五族化合物半导体的全面了解将有助于深入了解其潜力和可持续发展态势，包括存在的诸多挑战。

针对宇航级功率集成电路中横向扩散金属氧化物半导体（LDMOS）器件抗单粒子辐射性能低的问题，开展了高压LDMOS抗单粒子效应加固技术的研究，采用重掺杂P+well及漏区缓冲层结构设计了一种耐压为60 V的N型LDMOS器件。利用TCAD软件对重掺杂P+well及漏区缓冲层结构的加固机理进行仿真分析，并对回片器件利用Ta离子（线性能量转移，LET=79.2 MeV·cm²/mg）进行辐照试验验证，结果表明，提高Pwell掺杂浓度和采用缓冲层结构可将高压LDMOS器件抗单粒子烧毁电压提升至60 V。

非贵金属修饰可以有效增强单一半导体的光生电荷分离, 进而改善光催化活性。采用一种简单的抗坏血酸室温还原法制备了WO₃-Cu复合光催化材料, 并用不同表征手段对其组成和结构进行了表征。结果显示, Cu颗粒沉积在WO₃纳米立方的表面, 在模拟太阳光照射下, 与WO₃相比, WO₃-Cu复合材料具有良好的光催化降解刚果红的能力。活性物种捕捉实验以及顺磁共振结果表明, 光诱导产生的空穴、羟基自由基、超氧自由基阴离子等活性物种在刚果红降解过程中起主要作用。根据光电化学测试结果, WO₃在光催化过程中产生的电子快速转移向Cu颗粒, 可以有效分离光生电子-空穴对并加快光生载流子迁移, 进而有利于光催化反应的发生, 从而使WO₃表现出较高的光催化活性。