为了减少制造工艺的流程, 改进的 4-Mask工艺被广泛应用。但这个工艺仍存在一些问题, 如果有源层刻蚀和第二次源漏数据线刻蚀之间间隔时间较长(≥5.9 h), 则有源层刻蚀所用气体Cl2形成的活化分子会对沟道内Al造成腐蚀。除了缩短上述间隔时间的方法外, 本文应用有源层刻蚀后处理加入SF6/O2的方法, 很好地阻止了对Al的腐蚀, 对改进后4-Mask工艺的进一步应用具有非常重要的意义。

Improved 4-Mask process was developed in order to reduce manufacturing process.This process has several issues.If the delay time between Active Etch and 2SD Wet Etch was too long(≥5.9 h),there will be Al corrosion in the channel by Cl2 which is used by Active Etch. However, it brings a matter to a successfully settlement and meets with good results about Al corrosion prevention with adding SF6/O2 in the After-Treatment of Active Etch. Moreover, it brings successfully results to be applied to improved 4-Mask process.