发光学报, 2011, 32 (4): 363, 网络出版: 2011-04-28   

利用MOCVD在r面蓝宝石上生长的a面GaN中两步AlN缓冲层的优化

Optimization of Two-step AlN Buffer of a-plane GaN Films Grown on r-plane Sapphire by MOCVD
作者单位
中国科学院物理研究所 凝聚态国家重点实验室, 北京 100190
摘要
采用两步AlN缓冲层(一层低温AlN和一层高温AlN)在r面蓝宝石衬底上生长了非极性的a面GaN, 并利用高分辨X射线衍射和光致荧光谱对所生长的材料进行了研究。两步AlN缓冲层在我们之前的工作中已被证明比单步高温AlN或低温GaN缓冲层更有利于减小材料各向异性和提高晶体质量, 本文进一步优化了两步AlN缓冲层的结构, 并得到了各向异性更小, 晶体质量更好的a面GaN薄膜。分析表明, 两步AlN缓冲层中的低温AlN层在减小各向异性中起着关键作用。低温AlN层能抑制了优势方向(c轴)的原子迁移, 有利于劣势方向(m轴)的原子迁移, 从而减小了Al原子在不同方向迁移能力的差异, 并为其后的高温AlN缓冲层和GaN层提供“生长模板”, 以得到各向异性更小、晶体质量更好的a面GaN材料。
Abstract
Nonpolar (1120) a-plane GaN films with two-step AlN buffer(a low-temperature (LT) and a high-temperature (HT) AlN layers) were grown on (1102) r-plane sapphire by metalorganic chemical vapor deposition (MOCVD). The as-grown films were investigated by high-resolution X-ray diffraction (XRD) and photoluminescence (PL). The two-step AlN buffer has been proved to be advantageous in crystal quality compared with one-step LT-GaN or HT-AlN buffers in our early works. In this report, the thickness of the two-step buffer was further optimized, and much less anisotropic a-plane GaN films were achieved. It was found that the LT-AlN layer of the two-step buffer played a key role in reduction of anisotropy of the GaN film grown.
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何涛, 陈耀, 李辉, 戴隆贵, 王小丽, 徐培强, 王文新, 陈弘. 利用MOCVD在r面蓝宝石上生长的a面GaN中两步AlN缓冲层的优化[J]. 发光学报, 2011, 32(4): 363. HE Tao, CHEN Yao, LI Hui, DAI Long-gui, WANG Xiao-li, XU Pei-qiang, WANG Wen-xin, CHEN Hong. Optimization of Two-step AlN Buffer of a-plane GaN Films Grown on r-plane Sapphire by MOCVD[J]. Chinese Journal of Luminescence, 2011, 32(4): 363.

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