1 华南师范大学 物理与电信工程学院, 广东省量子调控工程与材料重点实验室, 广东 广州 510006
2 广东省高效绿色能源与环保材料工程技术研究中心, 广东 广州 510006
采用固相烧结法制备了Eu3+掺杂的铌酸钠钾(KNN)陶瓷。用X射线粉末衍射仪、荧光光谱测试仪和LCR精确阻抗测试仪等对其结构、发光性能和介电性能进行表征。XRD结果显示样品为钙钛矿结构。荧光分析结果表明, 致密度对KNN陶瓷材料发光性能有一定的影响, Eu3+掺杂量是影响其发光性能的重要因素。其中掺杂Eu摩尔分数为4%的样品在930 ℃焙烧后其发光最强, 在396 nm紫外光激发下, 发射光谱最强峰在614 nm, 对应于Eu3+的5D0-7F2电偶极跃迁。样品经3 kV/cm、110 ℃极化30 min后进行压电性能检测, 结果表明提高Eu3+掺杂量以及陶瓷的致密度, 可改善压电性能。其中掺杂4%Eu的KNN压电常数D33最大为98 pC/N, 在1 kHz、100 ℃时, 介电常数最小为217, 介电损耗tanθ=0.199, 且仍然保持较高的居里温度Tc=426 ℃。
固相法 铌酸钠钾 发光性能 介电性能 压电陶瓷 solid-state method KNN photoluminescence dielectric properties piezoelectric ceramics
Author Affiliations
Abstract
1 Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006, China
2 Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
3 University of Chinese Academy of Sciences, Beijing 100049, China
4 Institute of Optical Communication Materials and State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Pr3+/Yb3+ co-doped CaNb2O6 thin films are deposited on Si(100) substrates by pulsed laser deposition and annealed at different temperatures in air atmosphere. X-ray diffraction, Raman spectroscopy, atomic force microscopy, X-ray photoelectron spectroscopy, and photoluminescence spectra are used to characterize the samples. The results show that the annealing temperature has a strong effect on the film’s grain size, structure, morphology, and the up-conversion luminescence properties. The grain size and up-conversion luminescence of Pr3+/Yb3+ co-doped CaNb2O6 films increases with the increasing annealing temperature.
160.5690 Rare-earth-doped materials 310.6860 Thin films, optical properties Chinese Optics Letters
2015, 13(5): 051603
Author Affiliations
Abstract
1 Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006, China
2 Institute of Optical Communication Materials and State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Cr3+/Yb3+ codoped Y3Al5O12 (i.e., YAG) thin films are prepared by pulsed laser deposition. The films are characterized by X-ray diffraction, atomic force microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, and photoluminescence spectra. Excitation at 446 or 587 nm, a broadband emission in the range of 610–800 nm, and an intense near-infrared at 1030 nm are obtained, showing cooperative energy transfer from Cr3+ to Yb3+ ions in the Cr3+/Yb3+ codoped YAG thin films; energy transfer efficiency is 71%. The YAG films may have potential application to enhance the efficiency of silicon solar cells.
070.4790 Spectrum analysis 160.2540 Fluorescent and luminescent materials 160.5690 Rare-earth-doped materials Chinese Optics Letters
2015, 13(6): 060701
广东省量子调控工程与材料重点实验室 华南师范大学物理与电信工程学院,广东 广州 510006
采用熔盐法制备了Sm3+掺杂的SnNb2O6粉体,利用X射线粉末衍射、扫描电子显微镜对其物相和形貌进行了表征,用激发、发射光谱和荧光寿命对样品的发光性能进行了研究。结果表明: 所得样品为单斜晶系的SnNb2O6,在407 nm的激发下,有较强的橙红色发射,最强峰位于599 nm,属于Sm3+的4G5/2→6H7/2跃迁。
熔盐法 光致发光 molten-salt growth method SnNb2O6∶Sm3+ SnNb2O6∶Sm3+ photoluminesce
广东省量子调控工程与材料重点实验室 华南师范大学物理与电信工程学院, 广东 广州 510006
采用水热法制备了Eu3+掺杂的β-Ga2O3粉体,利用X射线粉末衍射、场发射扫描电子显微镜、透射电子显微镜、拉曼光谱和发光光谱等测试手段对其物相、形貌和发光性能等进行了研究.结果表明：所得样品为单斜晶系的β-Ga2O3；在波长为325 nm的He-Cd激光器激发下,发射光谱的最强峰位于612 nm,属于Eu3+的5D0→7F2电偶极跃迁；在模拟太阳光照射下,样品对甲基橙具有较高的光催化降解率,经过2 h后,甲基橙的降解率可达到75%.
水热法 光致发光 hydrothermal method Eu3+:β-Ga2O3 β-Ga2O3:Eu3+ photoluminescence
中国科学院上海光学精密机械研究所, 上海 201800
为了寻找可能替代蓝宝石作为氮化镓外延的新型衬底,通过48 h的气相传输平衡,分别在1000 ℃、1030 ℃、1050 ℃、1070 ℃和1100 ℃制备了一层单相多晶的γ铝酸锂膜。X射线衍射和扫描电镜分别用于表征膜的物相、取向和表面形貌。结果显示,γ铝酸锂择优取向的好坏取决于气相平衡传输温度,在1050 ℃制备的γ铝酸锂具有高度的[100]择优取向;在γ铝酸锂(001)面上的双轴拉应力可能有助于[100]择优取向的形成;γ铝酸锂晶粒表面裂纹的方向一致性与其择优取向紧密相关。上述结果表明在合适的工艺条件下,气相传输平衡法制备的γ铝酸锂/蓝宝石可能成为一种很有前景且适合(1-100)面氮化镓生长的复合衬底。
薄膜光学 复合衬底 气相传输平衡 γ铝酸锂
