多晶硅电阻线性度补偿方法研究
[1] CHUANG H M, THEI K B, TSAI S F, et al. Temperature-dependent characteristics of polysilicon and diffused resistors ［J］. IEEE Trans Elec Dev, 2003, 50(5): 1413-1415.
[2] RAMAN M S, BHATTACHARYA K E, BHAT K N. Physical model for the resistivity and temperature coefficient of resistivity in heavily doped polysilicon ［J］. IEEE Trans Elec Dev, 2006, 53(8): 1885-1892.
[3] ZUMBAHLEN H. Basic linear design ［Z］. Analog Devices, Inc., 2007: 10.15-10.20.
[4] SCHAFFT H A. Thermal analysis of electromigration test structures ［J］. IEEE Trans Elec Dev, 1987, 34(3): 664-672.
[5] MITTL S, GUARIN F. Self-heating and its implications on hot carrier reliability evaluations ［C］ // IEEE Int Reliab Phys Symp. Monterey, CA, USA. 2015.
杨洋, 雷郎成, 高炜祺, 胡永菲, 刘虹宏, 付东兵. 多晶硅电阻线性度补偿方法研究[J]. 微电子学, 2022, 52(1): 33. YANG Yang, LEI Langcheng, GAO Weiqi, HU Yongfei, LIU Honghong, FU Dongbing. Study on Compensation Method for Polysilicon Resistance Linearity[J]. Microelectronics, 2022, 52(1): 33.
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