能量分辨中子成像谱仪是中国散裂中子源当前在建的谱仪之一，其衍射探测器90°分区采用⁶LiF/ZnS中子闪烁体探测器作为探测设备。为实现探测器高位置分辨，读出电子学系统采用了一种电容网络复合读出电路和电荷重心法相结合的实现方法，并研制了电子学样机。该样机由电容网络复合读出电路、前置放大板和数字读出板三部分组成，基本功能验证完成后，分别在实验室和中国散裂中子源的20号束线上进行了相关性能参数测试，测试结果显示：电子学的积分非线性≤0.95%，时间分辨约为12 ns；探测器位置分辨为1 mm、探测效率为65%@1.6 ?，均达到了工程设计指标。该样机的成功研制为能量分辨中子成像谱仪未来顺利开展谱仪实验提供了可靠的技术保障。

A physics-based analytical expression that predicts the charge, electrical field and potential distributions along the gated region of the GaN HEMT channel has been developed. Unlike the gradual channel approximation (GCA), the proposed model considers the non-uniform variation of the concentration under the gated region as a function of terminal applied voltages. In addition, the model can capture the influence of mobility and channel temperature on the charge distribution trend. The comparison with the hydrodynamic (HD) numerical simulation showed a high agreement of the proposed model with numerical data for different bias conditions considering the self-heating and quantization of the electron concentration. The analytical nature of the model allows us to reduce the computational and time cost of the simulation. Also, it can be used as a core expression to develop a complete physics-based transistor Ⅳ model without GCA limitation.

以AC-Link^TM能量变换的方式为基础，对变换器的拓扑结构和工作模式进行了改进，使谐振电路得以工作在双极性模式下，并基于新拓扑设计了相应的换流时序和控制算法，增强了变换器对三相输入电压波动的适应性，使其具备了理论上任意倍数的升压能力和高输入功率因数。利用Matlab/Simulink搭建了30 kW仿真模型，仿真结果显示，在三相电网输入、变压器变比1∶1及阻性负载的条件下，输出电压达到3 kV，升压能力达到了6倍。这表明该变换器具有大范围输出电压工作的能力。

Nanogap plasmonic structures with strong coupling between separated components have different responses to orthogonal-polarized light, giving rise to giant optical chirality. Here, we proposed a three-dimensional (3D) nanostructure that consists of two vertically and twistedly aligned nanogaps, showing the hybridized charge distribution within 3D structures. It is discovered that the structure twisted by 60° exhibits plasmonic coupling behavior with/without gap modes for different circular-polarized plane waves, showing giant chiral response of 60% at the wavelength of 1550 nm. By controlling the disk radius and the insulator layer, the circular dichroism signal can be further tuned between 1538 and 1626 nm.