相同关键词【heterostructures】论文列表 -- 中国光学期刊网

Visible-to-near-infrared photodetectors based on SnS/SnSe₂ and SnSe/SnSe₂ p−n heterostructures with a fast response speed and high normalized detectivity

Xinfa Zhu ^1†Weishuai Duan ^1†Xiancheng Meng ¹Xiyu Jia ¹[ ... ]Chao Fan ^1,**

Author Affiliations

Abstract

¹ School of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300401, China

² School of Science, Northeast Electric Power University, Jilin 132012, China

The emergent two-dimensional (2D) material, tin diselenide (SnSe₂), has garnered significant consideration for its potential in image capturing systems, optical communication, and optoelectronic memory. Nevertheless, SnSe₂-based photodetection faces obstacles, including slow response speed and low normalized detectivity. In this work, photodetectors based on SnS/SnSe₂ and SnSe/SnSe₂ p?n heterostructures have been implemented through a polydimethylsiloxane (PDMS)?assisted transfer method. These photodetectors demonstrate broad-spectrum photoresponse within the 405 to 850 nm wavelength range. The photodetector based on the SnS/SnSe₂ heterostructure exhibits a significant responsivity of 4.99 × 10³ A?W^?1, normalized detectivity of 5.80 × 10¹² cm?Hz^1/2?W^?1, and fast response time of 3.13 ms, respectively, owing to the built-in electric field. Meanwhile, the highest values of responsivity, normalized detectivity, and response time for the photodetector based on the SnSe/SnSe₂ heterostructure are 5.91 × 10³ A?W^?1, 7.03 × 10¹² cm?Hz^1/2?W^?1, and 4.74 ms, respectively. And their photodetection performances transcend those of photodetectors based on individual SnSe₂, SnS, SnSe, and other commonly used 2D materials. Our work has demonstrated an effective strategy to improve the performance of SnSe₂-based photodetectors and paves the way for their future commercialization.

two-dimensional materials tin diselenide heterostructures broad-spectrum photodetectors

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Journal of Semiconductors

2024, 45(3): 032703

综合评述

SnO₂/SnSe₂异质结构物理性能的第一性原理研究

周慧楠 ^1,*王智浩 ¹刘起英 ²史国华 ²[ ... ]赵洪力 ¹

作者单位

摘要

¹ 亚稳材料制备技术与科学国家重点实验室，燕山大学材料科学与工程学院，河北秦皇岛 066004

² 威海中玻新材料技术研发有限公司，山东威海264200

³ 唐山学院，河北唐山 063000

构建宽窄带隙同型异质结构的双层薄膜是提高透明导电薄膜光电性能的新思路。采用基于密度泛函的第一性原理，对本征和掺杂SnO2/SnSe2的电子结构、光学性质、载流子迁移率、电荷分布、能带排列进行计算。结果表明：本征和掺杂SnO2/SnSe2电子结构内部存在的电势差会使体系内部的电子向着界面处或SnSe2处转移，处于界面处的电子会在界面间隙内形成二维电子气并在界面处高速移动，从而提高了载流子的迁移率，而处于SnSe2处的电子由于没有杂质离子散射的影响迁移率也相应提高，4种不同掺杂类型异质结构的载流子迁移率分别为772.82、5 286.04、2 656.90 m2/(S·V)和17 724.60 m2/(S·V)，光学透过率在80%以上。

透明导电薄膜异质结构第一性原理载流子迁移率 transparent conductive oxide thin films heterostructures first principles carrier mobility

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硅酸盐学报

2023, 51(10): 2626

特约专栏—新型局域场调控红外探测技术

二维材料在红外探测器中的应用最新进展（特邀）

下载：799次

贾欣宇 ^1,2兰长勇 ^1,2,*李春 ^1,2

作者单位

摘要

¹ 电子科技大学光电科学与工程学院，四川成都 611731

² 电子科技大学电子薄膜与集成器件国家重点实验室，四川成都 611731

二维材料，具有原子厚度，以其独特的物理、化学性质，吸引了广大研究人员的关注，成为了众多研究领域（如物理、材料、电子、光电子和化学等）的明星材料。因二维材料具有较高的载流子迁移率、强的光-物质相互作用、电/光学性质各向异性等，使其在光电子领域具有光明的应用前景。其中，窄带隙二维材料，如黑磷、黑磷砷等，在红外光电探测器中表现出巨大的应用潜力，成为了红外探测领域的新宠。文中将对二维材料在红外探测器中的应用，特别是光子型光电探测器的最新进展进行介绍。首先对二维材料的背景进行介绍；然后介绍表征光电探测器的关键参数；接着介绍二维材料在红外探测器中的最新进展，分别展示了单二维材料红外探测器、异质结红外探测器和光波导红外探测器方面的进展；最后对二维材料在红外探测器中的应用进行展望。

二维材料异质结光电探测器红外 two-dimensional materials heterostructures photodetectors infrared

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红外与激光工程

2022, 51(7): 20220065

基于超薄纳米结构的光催化二氧化碳选择性转化

下载：503次

高娃 ^*熊宇杰吴聪萍周勇邹志刚

作者单位

摘要

21世纪以来, 能源短缺和环境污染一直是人类面临的重大挑战?光催化二氧化碳(CO₂)还原, 通过半导体捕获光能, 获得碳氢化合物太阳能燃料是解决能源危机并推动碳循环的有前景的策略之一?然而, 活性低?产物选择性差又极大地限制了这一技术的实际应用?因此, 调控产物选择性并提高光催化效率、加深对CO₂还原反应机理的理解具有重要意义?近年来, 超薄材料以其较高的比表面积, 丰富的不饱和配位的表面原子, 较短的电荷从内部到表面的迁移路径, 以及可裁剪的能带结构受到了广泛关注, 并在光催化CO₂还原领域取得了可喜的成果?本文在总结光催化CO₂还原反应机理的基础上, 介绍了通过构建异质结构、设计Z型系统、引入助催化剂以及缺陷工程等策略促进超薄纳米结构电子空穴分离和调控其电荷迁移路径的研究成果, 并指出了提高光催化CO₂还原效率和优化产物选择性的发展前景与挑战?

光催化CO2还原超薄异质结构助催化剂反应机理综述 photocatalytic CO2 reduction ultrathin heterostructures cocatalysts reaction mechanism review

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无机材料学报

2022, 37(1): 3

研究论文

Perovskite-transition metal dichalcogenides heterostructures: recent advances and future perspectives

Download：823次

Ahmed Elbanna ^1,2†Ksenia Chaykun ^3†Yulia Lekina ^2,4Yuanda Liu ¹[ ... ]Jinghua Teng ^1,*

Author Affiliations

Abstract

¹ Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore

² Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 637371, Singapore

³ Interdisciplinary Graduate Program, Energy Research Institute@NTU, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore

⁴ The Photonics Institute and Center for Disruptive Photonic Technologies, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 Singapore

⁵ School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore

⁶ Berkeley Educational Alliance for Research in Singapore (BEARS), Ltd., 1 CREATE Way, Singapore 138602, Singapore

Transition metal dichalcogenides (TMDs) and perovskites are among the most attractive and widely investigated semiconductors in the recent decade. They are promising materials for various applications, such as photodetection, solar energy harvesting, light emission, and many others. Combining these materials to form heterostructures can enrich the already fascinating properties and bring up new phenomena and opportunities. Work in this field is growing rapidly in both fundamental studies and device applications. Here, we review the recent findings in the perovskite-TMD heterostructures and give our perspectives on the future development of this promising field. The fundamental properties of the perovskites, TMDs, and their heterostructures are discussed first, followed by a summary of the synthesis methods of the perovskites and TMDs and the approaches to obtain high-quality interfaces. Particular attention is paid to the TMD-perovskite heterostructures that have been applied in solar cells and photodetectors with notable performance improvement. Finally through our analysis, we propose an outline on further fundamental studies and the promising applications of perovskite-TMD heterostructures.

transition metal dichalcogenides perovskites heterostructures photodetectors solar cells 2D materials

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Opto-Electronic Science

2022, 1(8): 220006

“红外光电探测器前沿技术”专栏$低维红外探测材料与器件

半导体纳米线红外探测研究进展（特邀）

下载：677次

郭亚楠 ¹刘东 ¹苗成成 ¹孙嘉敏 ¹杨再兴 ²

作者单位

摘要

¹ 山东大学微电子学院，山东济南 250100

² 山东大学物理学院，山东济南 250100

近年来，红外探测器由于其在军民领域广阔的应用前景已经受到了越来越多的关注。为了进一步实现室温宽谱段、高灵敏度、快速响应以及低功耗的红外探测器，低维半导体作为极具潜力的新型沟道材料得到了广泛的研究。其中，纳米线有着独特的电学与光电特性，当被应用到红外光电探测器中时，展现出了巨大的优势，例如尺寸小、功耗低、光吸收效率高、表面态丰富、易于光电子分离与收集以及与传统硅基工艺兼容等等。当前，对于纳米线红外探测器的研究一直在进行中并不断取得突破。文中主要概述了纳米线在红外光电探测领域的最新研究进展，介绍了半导体纳米线的基本特性、材料选择和制备方法，展示了多种二元与三元化合物半导体中已实现红外探测的纳米线材料及其当前研究达到的探测水平，并且分类总结了多种进一步提高光电探测性能的方法，包括异质结合、外场调控、器件集成等，随后针对不同构型纳米线红外探测器的优缺点，进行了简要的对比与说明，最后基于该领域仍然面临的挑战对其未来的发展方向进行了展望，并为其技术发展路线提出了初步的建议。

红外光电探测纳米线可控生长异质结构外场调控 infrared photodetectors nanowires controllable growth heterostructures external field control

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红外与激光工程

2021, 50(1): 20211010

Materials and Devices

带间级联激光器性能对结构变化的耐受性研究

林羽喆 ^1,2,3Jeremy A. MASSENGALE ^2,4黄文祥 ^2,4杨瑞青 ^2,*[ ... ]Michael B. SANTOS ⁴

作者单位

摘要

¹ Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing00083, China

² School of Electrical and Computer Engineering，University of Oklahoma，Norman 73019，USA

³ Center of Materials Science and Optoelectronics Engineering，University of the Chinese Academy of Sciences，Beijing 100049，China

⁴ Homer L. Dodge Department of Physics and Astronomy，University of Oklahoma，Norman 73019，USA

通过对两种结构参数与设计偏差较大的带间级联激光器（ICL）的研究，探讨了器件性能在结构变化下的耐受性。在300 K时，即使和4.6 μm的设计波长相比蓝移700 nm以上，激光器仍然性能良好，其阈值电流密度低至320 A/cm²。此研究为带间级联激光器在结构变化方面的耐受性提供了坚实的实验依据。

III-V族半导体带间级联激光器中红外量子阱 II类异质结 III-V semiconductors interband cascade lasers mid-infrared quantum wells type-II heterostructures

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红外与毫米波学报

2020, 39(2): 137

光物理专题

The phonon physics of two-dimensional materials and related heterostructures

LIN Miao-Ling ^1,2MENG Da ^1,2CONG Xin ^1,2TAN Ping-Heng ^1,2,3,*

Author Affiliations

Abstract

¹ 中国科学院半导体研究所半导体超晶格国家重点实验室, 北京 100083

² 中国科学院大学材料科学与光电技术学院, 北京 100049

³ 北京量子信息科学研究院, 北京 100193

Phonon is one of the most important elementary excitations, and is fundamental for understanding thermodynamic properties, such as heat capacity, Debye temperature, and the coefficient of thermal expansion. Furthermore, electron-phonon coupling can determine the electric conductivity and superconductivity of materials. Raman spectroscopy is the most important tool to study phonon physics, and can not only be utilized to explore the lattice structure and quality of materials but also their phonon properties, electronic band structure and electron-phonon coupling. Here, we investigate the phonon physics of two-dimensional (2D) materials and the related van der Waals heterostructures by Raman spectroscopy. First, we will introduce interlayer and intralayer phonon modes. The frequency of the interlayer phonon modes can be well reproduced by the linear chain model while their intensity can be calculated by the interlayer bond polarizability model; in addition, the splitting frequency between Davydov components in multilayer 2D materials originating from the same intralayer mode in monolayer counterpart can be well fitted by the van der Waals model. Secondly, we extend these models to 2D van der Waals heterostructures. By taking twisted multilayer graphene, MoS2/graphene and hBN/WS2 heterostructures as examples, we demonstrate how to calculate the frequency and Raman intensity of the interlayer modes by the linear chain and interlayer polarizability models, respectively, which can further give the strength of the interlayer coupling and electron-phonon coupling for layer-breathing modes in van der Waals heterostructures.

声子拉曼光谱二维材料范德瓦尔斯异质结层间键极化率模型层间耦合 phonon Raman spectroscopy two-dimensional materials van der Waals heterostructures interlayer bond polarizability model interlayer coupling

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Journal of Semiconductors

2019, 48(7):

InAs/AlSb 异质结的Pd/Ti/Pt/Au 合金化欧姆接触

张静 ^1,2吕红亮 ^1,*倪海桥 ²牛智川 ²[ ... ]张玉明 ¹

作者单位

摘要

¹ 西安电子科技大学宽带隙半导体技术国家重点学科实验室, 陕西西安 710071

² 中国科学院半导体研究所, 超晶格国家重点实验室, 北京 100083

为了得到较低的接触电阻, 研究了帽层未掺杂的InAs/AlSb 异质结的Pd/Ti/Pt/Au合金化欧姆接触.利用传输线模型(TLM)测量了接触电阻Rc.在最佳的快速热退火条件为275 °C和20 s时, InAs/AlSb 异质结的Pd/Ti/Pt/Au接触电阻值为0.128 Ω·mm.TEM观察发现经过快速热退火后Pd已经扩散到半导体中有利于高质量欧姆接触的形成.研究表明经过Pd/Ti/Pt/Au 合金化欧姆接触后Rc有明显减小, 适用于InAs / AlSb 异质结的应用.

欧姆接触快速热退火 InAs/AlSb异质结 Ohmic contacts rapid thermal annealing InAs/AlSb heterostructures

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红外与毫米波学报

2018, 37(6): 679

发光学应用及交叉前沿

异质镜像光子晶体的光子带隙研究

王瑾 ^1,*温廷敦 ¹许丽萍 ¹樊彩霞 ²

作者单位

摘要

¹ 中北大学理学院物理系, 山西太原030051

² 中北大学电子与计算机科学技术学院, 山西太原030051

对异质镜像结构光子晶体(ABCCBA)N进行了研究。首先, 利用一维介电体系中处理光传播的方法——传输矩阵法, 详细推导了异质镜像光子晶体透射率的计算公式; 然后, 采用Matlab软件编程仿真并分析了光子带隙形成与镜像周期数目、光子带隙数目与光子晶体薄层厚度、光子带隙位置与入射角大小等的关系。结果表明: 光子带隙的形成及变化主要受光子晶体薄层厚度及入射角大小变化的影响。通过改变影响光子晶体光子带隙的参数, 可得到不同频段的光子带隙, 用来制作高质量反射镜、滤波器和发光二极管等。

异质镜像光子晶体传输矩阵法光子带隙 mirror heterostructures photonic crystal transmission matrix photonic bandgap

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发光学报

2013, 34(8): 1079

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