为获得更高的阈值电压, 提出了一种新型栅下双异质结增强型AlGaN/GaN高电子迁移率晶体管(HEMT)。使用双异质结电荷控制模型分析了基本机理, 推导了阈值电压表达式。仿真结果表明, 器件阈值电压与调制层Al组分呈线性关系。当调制层Al组分小于势垒层时, 阈值电压增大, 反之减小。调制层厚度可加大这种调制作用。当调制层Al组分为0%、厚度为112 nm时, 器件具有2.13 V的阈值电压和1.66 mΩ·cm2的比导通电阻。相对于常规凹槽栅结构, 新结构的阈值电压提高了173%。
增强型 高电子迁移率晶体管 阈值电压 双异质结 电荷控制模型 enhancement-mode HEMT threshold voltage double heterojunction charge control model
Author Affiliations
Abstract
Photonics Research Laboratory, Electrical Engineering Department, Amirkabir University of Technology, Tehran, IranE-mail: hsnkato@aut.ac.ir
An optical bandwidth analysis of a quantum-well (16 nm) transistor laser with 150-\mum cavity length using a charge control model is reported in order to modify the quantum-well location through the base region. At constant bias current, the simulation shows significant enhancement in optical bandwidth due to moving the quantum well in the direction of collector-base junction. No remarkable resonance peak, limiting factor in laser diodes, is observed during this modification in transistor laser structure. The method can be utilized for transistor laser structure design.
量子阱 异质结双极型晶体管 电荷控制模型 复合寿命 270.0270 Quantum optics 250.0250 Optoelectronics 230.0230 Optical devices Chinese Optics Letters
2009, 7(5): 05435