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退火温度对铝掺杂氧化锌薄膜晶体质量及光电性能的影响

Effects of Annealing Temperature on Crystal Quality and Photoelectric Properties of Al-Doped ZnO Thin Film

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摘要

研究了退火温度对原子层沉积(ALD)生长的铝掺杂氧化锌(AZO)薄膜光电性能的影响, 结果发现:AZO薄膜在600 ℃退火后, X射线衍射峰的半峰全宽从未退火时的0.609°减小到0.454°, 晶体质量得到提升; 600 ℃退火后, 薄膜的表面粗糙度从未退火时的0.841 nm降低至0.738 nm; 400 ℃退火后, 薄膜的载流子浓度和迁移率均达到最大值, 分别为1.9×1019 cm-3和4.2 cm2·V-1·s-1, 之后随着退火温度进一步升高, 载流子浓度和迁移率降低; 退火温度由300 ℃升高到600 ℃过程中薄膜的吸收边先蓝移后红移。

Abstract

The effects of annealing temperature on the photoelectric properties of Al-doped ZnO (AZO) film grown with atomic layer deposition (ALD) technique are investigated. It is found that the full width at half maximum of X-ray diffraction peaks of the AZO thin film decreases from 0.609° before annealing to 0.454° after annealing at 600 ℃, and the crystal quality is improved. The surface roughness of thin film reduces from 0.841 nm before annealing to 0.738 nm after annealing at 600 ℃. The carrier concentration and mobility ratio of the thin film annealed at 400 ℃ are the largest, and they are 1.9×1019 cm-3 and 4.2 cm2·V-1·s-1, respectively. However, as the annealing temperature continues to increase, the carrier concentration and mobility ratio decrease. With the annealing temperature increases from 300 ℃ to 600 ℃, the absorption edge of the thin film shows blue-shift at first and then red-shift.

Newport宣传-MKS新实验室计划
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中图分类号:O484

DOI:10.3788/cjl201946.0403002

所属栏目:材料与薄膜

基金项目:国家重点研发计划(2017YFB0402800)、国家自然科学基金(61674021, 11674038, 61704011)、吉林省科技发展计划(20160519007JH, 20160520117JH, 20160204074GX, 20170520118JH, 20160203015GX)、长春理工大学科技创新基金(XJJLG-2016-11, XJJLG-2016-14)

收稿日期:2018-11-19

修改稿日期:2018-12-13

网络出版日期:2019-01-08

作者单位    点击查看

郭德双:长春理工大学高功率半导体激光国家重点实验室, 吉林 长春 130022
陈子男:长春理工大学高功率半导体激光国家重点实验室, 吉林 长春 130022
王登魁:长春理工大学高功率半导体激光国家重点实验室, 吉林 长春 130022
唐吉龙:长春理工大学高功率半导体激光国家重点实验室, 吉林 长春 130022
方铉:长春理工大学高功率半导体激光国家重点实验室, 吉林 长春 130022
房丹:长春理工大学高功率半导体激光国家重点实验室, 吉林 长春 130022
林逢源:长春理工大学高功率半导体激光国家重点实验室, 吉林 长春 130022
王新伟:长春理工大学材料科学与工程学院, 吉林 长春 130022
魏志鹏:长春理工大学高功率半导体激光国家重点实验室, 吉林 长春 130022

联系人作者:王登魁(wccwss@foxmail.com)

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引用该论文

Guo Deshuang,Chen Zinan,Wang Dengkui,Tang Jilong,Fang Xuan,Fang Dan,Lin Fengyuan,Wang Xinwei,Wei Zhipeng. Effects of Annealing Temperature on Crystal Quality and Photoelectric Properties of Al-Doped ZnO Thin Film[J]. Chinese Journal of Lasers, 2019, 46(4): 0403002

郭德双,陈子男,王登魁,唐吉龙,方铉,房丹,林逢源,王新伟,魏志鹏. 退火温度对铝掺杂氧化锌薄膜晶体质量及光电性能的影响[J]. 中国激光, 2019, 46(4): 0403002

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