光刻机是极大规模集成电路制造的核心装备，深紫外光刻机是用于先进技术节点芯片制造的主流光刻设备。光刻机的成像质量直接影响光刻机性能指标，是光刻机正常工作的前提。作为提高光刻成像质量的重要手段，计算光刻技术在光刻机软硬件不变的条件下，采用数学模型和软件算法对照明光源、掩模图形和工艺参数等进行优化，使目标图形高保真度地成像到硅片上。光刻成像模型是计算光刻技术的基础，成像模型仿真精度和速度的不断提高支撑了计算光刻技术的发展。结合本团队的研究工作，介绍了光刻成像模型的发展，总结了光学邻近效应修正技术、光源掩模优化技术和逆向光刻技术这三种主要计算光刻技术的研究进展。

Lithography tool is the core equipment for the ultra-large-scale integrated circuit (ULSI) manufacturing. Deep ultraviolet (DUV) lithography tool is the mainstream lithographic equipment in the advanced technology node of chip manufacturing. The imaging quality of lithography tool, which has a direct impact on the performance metrics, is the premise that the lithography tool can work properly. Computational lithography technique is a vital way to improve the lithographic imaging quality when the software and hardware of lithography tool remain unchanged. It optimizes the illumination source, the mask pattern, and the process parameters using mathematical models and algorithms. With the help of computational lithography, the target pattern can be transferred onto the wafer with high imaging fidelity. Lithographic imaging model is the basis of computational lithography technique. The continuous increase of imaging model’s simulation accuracy and speed supports the development of computational lithography technique. Combining the research work of our group, the development of lithographic imaging model is reviewed. Then the research progresses of three main computational lithography techniques, including optical proximity effect correction (OPC), source mask optimization (SMO), and inverse lithography technology (ILT), are summarized in this paper.