光子学报
2021, 50(11): 1123002
Author Affiliations
Abstract
1 School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi 214122, China
2 School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu 215556, China
3 The 38th Research Institute of China Electronics Technology Group Corporation, Hefei 230000, China
We have fabricated the AlGaN solar-blind ultraviolet metal–semiconductor–metal (MSM) photodetectors (PDs) with an Al composition of 0.55. The surface roughness and dislocations of the high-Al-content epitaxial layer are analyzed by atomic force microscopy and transmission electron microscopy, respectively. The device exhibits high spectral responsivity and external quantum efficiency due to the photoconductive gain effect. The current reveals a strong dependence on high temperatures in the range of 4–10 V. Moreover, the Poole–Frenkel emission model and changing space charge regions are employed to explain the carrier transport and photoconductive gain mechanisms for the AlGaN PD, respectively.
metal–semiconductor–metal solar blindness photodetector Poole–Frenkel emission photoconductive gain Chinese Optics Letters
2021, 19(8): 082504
摘要: 本文设计了一种具有低 Al组分 p型渐变 AlxGa1-xN层和高 /低 Al组分 AlGaN倍增层的背入射式 p-i-n-i-n吸收倍增区分离的特殊 AlGaN日盲紫外雪崩光电二极管( Avalanche Photodiode, APD), 并插入 AlN/Al0. 64Ga0. 36N分布式布拉格反射器来改善 APD的日盲响应。为了在实验条件下生长出特殊设计的 AlGaN APD, 用 Atlas-Silvaco仿真软件对该器件结构进行仿真, 并用常规结构 APD作为参照。研究结果表明, 特殊设计的 APD比常规的 APD表现出更好的光电特性。由于设计的 APD拥有更高的空穴碰撞电离系数并同时产生了与外加电场同方向的高极化电场, 所以相比于常规的 APD, 本文设计的 APD的雪崩倍增增益为 6. 11×104, 提高了 10倍, 同时雪崩击穿电压显著降低。设计的 APD的光电特性良好, 为生长 AlGaN基 APD提供了坚实的理论基础。
光电器件 雪崩光电二极管 极化电场 分布式布拉格反射器 optoelectronic device Avalanche Photodiode(APD) AlGaN AlGaN polarization electric field distributed Bragg reflector 光学 精密工程
2020, 28(12): 2614
