1 中国科学院上海微系统与信息技术研究所集成电路材料全国重点实验室，上海 200050
2 中国科学院大学材料科学与光电技术学院，北京 100049
凭借优异的材料与光学特性，第三代半导体——碳化硅材料在集成光子学领域发展迅速并获得广泛关注。当前碳化硅材料正逐渐发展为可与CMOS工艺兼容的优异光子学材料平台。受益于高非线性系数和低光学损耗特性，碳化硅材料已广泛应用于多种片上非线性光学效应的实现，如高效二次谐波、快速电光调制和孤子光学频率梳产生等。同时与金刚石类似，碳化硅材料具有性能优异的二能级固体自旋色心，基于碳化硅色心与谐振腔的腔量子电动力学效应在近年来也得到广泛研究。综合近几年来国内外在碳化硅光子学上的研究现状，介绍碳化硅在集成非线性光学和集成量子光学领域中的最新研究进展，并就碳化硅光子学的未来发展趋势进行展望和讨论。
光子器件 碳化硅 非线性光子学 量子光学 集成光路 光学学报
2023, 43(16): 1623017
Author Affiliations
Abstract
1 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3 XOI Technology Co., Ltd., Shanghai 201899, China
The 4H-silicon carbide on insulator (4H-SiCOI) has recently emerged as an attractive material platform for integrated photonics due to its excellent quantum and nonlinear optical properties. Here, we experimentally realize one-dimensional photonic crystal nanobeam cavities on the ion-cutting 4H-SiCOI platform. The cavities exhibit quality factors up to and mode volumes down to 0.63 × (λ/n)3 in the visible and near-infrared wavelength range. Moreover, by changing the excitation laser power, the fundamental transverse-electric mode can be dynamically tuned by 0.6 nm with a tuning rate of 33.5 pm/mW. The demonstrated devices offer the promise of an appealing microcavity system for interfacing the optically addressable spin defects in 4H-SiC.
photonic crystal cavities silicon carbide thermo-optic effect Chinese Optics Letters
2022, 20(3): 031302
1 中国科学院上海微系统与信息技术研究所, 上海 200050
2 中国科学院大学, 北京 100049
上海市青年科技启明星计划(No.19QA1410600),上海市优秀学术带头人计划(No. 19XD1404600),中科院计划(No.Y82BRA1001)
量子存储 自组装量子点 单光子源 量子调控 应力调节 Quantum memory Self-assembled quantum dots Single-photon sources Quantum manipulation Strain tuning
