A supercontinuum white laser with ultrabroad bandwidth, intense pulse energy, and high spectral flatness can be accomplished via synergic action of third-order nonlinearity (3rd-NL) and second-order nonlinearity. In this work, we employ an intense Ti:sapphire femtosecond laser with a pulse duration of 50 fs and pulse energy up to 4 mJ to ignite the supercontinuum white laser. Remarkably, we use water instead of the usual solid materials as the 3rd-NL medium exhibiting both strong self-phase modulation and stimulated Raman scattering effect to create a supercontinuum laser with significantly broadened bandwidth and avoid laser damage and destruction. Then the supercontinuum laser is injected into a water-embedded chirped periodically poled lithium niobate crystal that enables broadband and high-efficiency second-harmonic generation. The output white laser has a 10 dB bandwidth encompassing 413 to 907 nm, more than one octave, and a pulse energy of 0.6 mJ. This methodology would open up an efficient route to creating a long-lived, high-stability, and inexpensive white laser with intense pulse energy, high spectral flatness, and ultrabroad bandwidth for application to various areas of basic science and high technology.

Output power and reliability are the most important characteristic parameters of semiconductor lasers. However, catastrophic optical damage (COD), which usually occurs on the cavity surface, will seriously damage the further improvement of the output power and affect the reliability. To improve the anti-optical disaster ability of the cavity surface, a non-absorption window (NAW) is adopted for the 915 nm InGaAsP/GaAsP single-quantum well semiconductor laser using quantum well mixing (QWI) induced by impurity-free vacancy. Both the principle and the process of point defect diffusion are described in detail in this paper. We also studied the effects of annealing temperature, annealing time, and the thickness of SiO₂ film on the quantum well mixing in a semiconductor laser with a primary epitaxial structure, which is distinct from the previous structures. We found that when compared with the complete epitaxial structure, the blue shift of the semiconductor laser with the primary epitaxial structure is larger under the same conditions. To obtain the appropriate blue shift window, the primary epitaxial structure can use a lower annealing temperature and shorter annealing time. In addition, the process is less expensive. We also provide references for upcoming device fabrication.

设计并制备了一款780 nm半导体激光器，并进行了外腔反馈锁模研究。利用金属有机化学气相沉积技术制备了激光器外延层，采用GaAsP/GaInP作为量子阱/波导层有源区，限制层采用低折射率AlGaInP材料。采用超高真空解理钝化技术，在激光器腔面蒸镀无定形ZnSe钝化层。未钝化器件在输出功率2.5 W时发生腔面灾变损伤（COD），钝化后器件未发生COD现象，电流在10 A时输出功率10.1 W，电光转换效率54%。体布拉格光栅（VBG）外腔锁定前后，器件的光谱半峰全宽分别为2.6 nm和0.06 nm，VBG变温调控波长范围约230 pm。

Enhanced acceleration of protons to high energy by relatively modest high power ultra-short laser pulses, interacting with snow micro-structured targets was recently proposed. A notably increased proton energy was attributed to a combination of several mechanisms such as localized enhancement of the laser field intensity near the tip of $1~\unicode[STIX]{x03BC}\text{m}$ size whisker and increase in the hot electron concentration near the tip. Moreover, the use of mass-limited target prevents undesirable spread of absorbed laser energy out of the interaction zone. With increasing laser intensity a Coulomb explosion of the positively charged whisker will occur. All these mechanisms are functions of the local density profile and strongly depend on the laser pre-pulse structure. To clarify the effect of the pre-pulse on the state of the snow micro-structured target at the time of interaction with the main pulse, we measured the optical damage threshold (ODT) of the snow targets. ODT of $0.4~\text{J}/\text{cm}^{2}$ was measured by irradiating snow micro-structured targets with 50 fs duration pulses of Ti:Sapphire laser.