射频磁控溅射法制备MoS<sub>2</sub>薄膜的最佳工艺参数研究

张俊峰; 孙再征; 孔腾飞; 蔡根旺; 李亚平; 胡莎; 樊志琴

人工晶体学报, 2023, 52 (2): 271, 网络出版: 2023-03-18

射频磁控溅射法制备MoS₂薄膜的最佳工艺参数研究

Optimal Process Parameters of Preparing MoS₂ Films by RF Magnetron Sputtering

论文大纲

张俊峰 ^*孙再征孔腾飞蔡根旺李亚平胡莎樊志琴

作者单位

河南工业大学理学院, 郑州 450001

MoS2薄膜射频磁控溅射二维材料正交试验法工艺参数 MoS2 films RF magnetron sputtering two-dimensional material orthogonal test method process parameter

摘要

采用射频(RF)磁控溅射法在石英衬底上制备了MoS2薄膜。通过正交试验研究了溅射时间、溅射温度、氩气流量和溅射功率对MoS2薄膜结构的影响。通过XRD、Raman、XPS、EDS和SEM对MoS2薄膜的结晶度、薄膜厚度和表面形貌进行分析，得到了制备MoS2薄膜的最佳工艺参数。发现溅射温度较高或较低结晶度都很差，在较低的溅射温度下样品的XRD衍射峰不明显。而当温度为250 ℃时，样品的XRD衍射峰较多，结晶度较好。根据正交试验法得出溅射温度对MoS2的结晶效果起着至关重要的作用，其次是氩气流量。当溅射温度为250 ℃，氩气流量为6 mL/min，溅射时间为30 min，溅射功率为300 W或400 W时，MoS2膜的结晶度较好。在这个条件下制备的膜较厚，但为以后的实验指明了方向。保持溅射温度、溅射功率和氩气流量不变，通过减少时间成功制备了厚度为58.9 nm的薄膜。

Abstract

MoS2 films were prepared on quartz substrate by radio frequency (RF) magnetron sputtering. The effect of sputtering time, sputtering temperature, argon flow rate and sputtering power on the structure of MoS2 films was studied by orthogonal test method. The crystallinity, thickness and surface morphology of MoS2 films were analyzed by XRD, Raman, XPS, EDS and SEM, the optimal process parameters for preparing MoS2 films were obtained. It is found that the crystallinity of the sample is poor at higher or lower sputtering temperature, and the XRD diffraction peak of the sample is not obvious at lower sputtering temperature. When the temperature is 250 ℃, the sample has more XRD diffraction peaks and better crystallinity. According to the orthogonal test, sputtering temperature plays a crucial role in the crystallization of MoS2, followed by argon flow rate. When sputtering temperature is 250 ℃, argon flow rate is 6 mL/min, sputtering time is 30 min, and sputtering power is 300 W or 400 W, the crystallinity of MoS2 film is better. The film prepared under this condition is thicker, but it points out the direction for future experiments. In the following experiments, sputtering temperature, sputtering power and argon flow rate can be kept unchanged. By shortening the time, films with a thickness of 58.9 nm have been successfully prepared.

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张俊峰, 孙再征, 孔腾飞, 蔡根旺, 李亚平, 胡莎, 樊志琴. 射频磁控溅射法制备MoS₂薄膜的最佳工艺参数研究[J]. 人工晶体学报, 2023, 52(2): 271. ZHANG Junfeng, SUN Zaizheng, KONG Tengfei, CAI Genwang, LI Yaping, HU Sha, FAN Zhiqin. Optimal Process Parameters of Preparing MoS₂ Films by RF Magnetron Sputtering[J]. Journal of Synthetic Crystals, 2023, 52(2): 271.

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