绝缘体上压电基板(POI)是一种新兴的压电单晶复合薄膜结构材料。POI基板由压电单晶材料薄层(单晶钽酸锂/铌酸锂)、二氧化硅层及高阻硅衬底构成, 采用Smart-Cut工艺制备, 可保证板层高均匀度及高质量的批量生产。通过这种基板可设计满足5G通信要求的高性能集成声表面波(SAW)谐振器和滤波器。基于POI材料制备的SAW器件具有高频、高品质因数(Q)值、低温度敏感性及较大带宽等优良特性, 同时还能在同一芯片上集成多个SAW滤波器, 具有广阔的市场应用前景。该文介绍了POI基板的制备、国内外的研究现状及POI基板在高性能SAW滤波器中的应用, 综述了制备POI基板的关键技术并展望了未来的发展趋势。

The piezo-on-insulator (POI) substrate is an emerging piezoelectric single-crystal composite thin film structural material. The POI substrate is composed of a thin layer of piezoelectric single-crystal material (single-crystal lithiumtantalate/lithium niobate), a silicon dioxide layer and a high-resistance silicon substrate. It is prepared by the Smart-Cut process, which can ensure the high uniformity and high-quality batch production of the layer. Through this substrate, the high performance integrated SAW resonators and filters that meet the 5G communication requirements can be designed. The SAW devices based on POI material have excellent characteristics such as high frequency, high Q, low temperature sensitivity and large bandwidth, and at the same time, multiple SAW filters can be integrated on the same chip, which has broad market application prospects. This paper introduces the preparation of POI substrate and the research status at home and abroad, the applications of POI substrate in high performance SAW filter, reviews the key techniques of preparing POI substrate and outlooks the future development trend.