Mechanical exfoliation (ME) and chemical vapor deposition (CVD) MoS₂ monolayers have been extensively studied, but the large differences of nonlinear optical performance between them have never been clarified. Here, we prepared MoS₂ monolayers using ME and CVD methods and investigated the two-photon absorption (TPA) response and its saturation. We found that the TPA coefficient of the ME monolayer was about (1.88 ± 0.21) × 10³ cm/GW, nearly two times that of the CVD one at (1.04 ± 0.15) × 10³ cm/GW. Furthermore, we simulated and compared the TPA-induced optical pulse modulation in multilayer cascaded structures, which is instructive and meaningful for the design of optical devices such as a beam shaper and optical limiter.

In this Letter, we reported the preliminary results of an integrating periodically capacitive-loaded traveling wave electrode (CL-TWE) Mach–Zehnder modulator (MZM) based on InP-based multiple quantum well (MQW) optical waveguides. The device configuration mainly includes an optical Mach–Zehnder interferometer, a direct current electrode, two phase electrodes, and a CL-TWE consisting of a U electrode and an I electrode. The modulator was fabricated on a 3 in. InP epitaxial wafer by standard photolithography, inductively coupled plasma dry etching, wet etching, electroplating, etc. Measurement results show that the MZM exhibits a 3 dB electro-optic bandwidth of about 31 GHz, a Vπ of 3 V, and an extinction ratio of about 20 dB.

In this Letter, blue phosphorescence organic light-emitting diodes (PHOLEDs) employ structures for electron and/or hole confinement; 1,3,5-tris(N-phenylbenzimiazole-2-yl)benzene is used as a hole confinement layer and tris-(phenylpyrazole)iridium [Ir(ppz)3] is utilized for an electron confinement layer (ECL). The electrical and optical properties of the fabricated blue PHOLEDs with various carrier-confinement structures are analyzed. Structures with a large energy offset between the carrier confinement and emitting layers enhance the charge-carrier balance in the emitting region, resulting from the effective carrier confinement. The maximum external quantum efficiency of the blue PHOLEDs with the double-ECLs is 24.02% at 1500 cd/m2 and its luminous efficiency is 43.76 cd/A, which is 70.47% improved compared to the device without a carrier-confinement layer.

With the development of semiconductor technology, semiconductor laser devices and semiconductor laser pump solid-state laser devices have been widely applied in z-scan experiments. However, the feedback light-induced output instability of semiconductor laser devices can negatively affect the accurate testing of the nonlinear index. In this work, the influence of feedback light on z-scan measurement is analyzed. Then the calculated formula of feedback light-induced false nonlinear z-scan curves is theoretically derived and experimentally verified. Two methods are proposed to reduce or eliminate the feedback light-induced false nonlinear effect. One is the addition of an attenuator to the z-scan optical path, and the other is the addition of an opto-isolator unit to the z-scan setup. The experimental and theoretical results indicate that the feedback light-induced false nonlinear effect is markedly reduced and can even be ignored if appropriate parameters are chosen. Thus, theoretical and experimental methods of eliminating the negative effect of feedback light on z-scan measurement are useful for accurately obtaining the nonlinear index of a sample.